Orientation dependence of HgCdTe epitaxial layers grown by MOCVD on Si substrates

Journal of Electronic Materials

Volumn 25, Issue 8, 1996, Pages 1347-1352

  Shigenaka, K ^a   Matsushita, K ^a   Sugiura, L ^a   Nakata, F ^a   Hirahara, K ^a   Uchikoshi, M ^b,c   Nagashima, M ^b   Wada, H ^b  

^a TOSHIBA CORPORATION   (Japan)

^b JAPAN DEFENSE AGENCY   (Japan)

^c Kumamoto Polytechnic College   (Japan)

Author keywords

HgCdTe; Metalorganic chemical vapor deposition (MOCVD); Orientation dependence; Si substrates; Transmission electron microscopy (TEM)

Indexed keywords

EID: 0343827033     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02655031     Document Type: Article

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