Electrical and optical properties of iodine doped CdZnTe layers grown by metalorganic vapor phase epitaxy

Journal of Electronic Materials

Volumn 27, Issue 6, 1998, Pages 527-531

  Yasuda, K ^a   Kojima, K ^a   Mori, K ^a   Kubota, Y ^a   Nimura, T ^a   Inukai, F ^a   Asai, Y ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

CdZnTe; Electrical properties; Iodine doping; Metalorganic vapor phase epitaxy (MOVPE); Photoluminescence (PL)

Indexed keywords

EID: 0000466063     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0009-3     Document Type: Article

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