Development of nuclear radiation detectors based on epitaxially grown thick CdTe layers on n+-GaAs substrates

Journal of Electronic Materials

Volumn 34, Issue 6, 2005, Pages 815-819

  Niraula, M ^a   Yasuda, K ^a   Takagi, K ^a   Kusama, H ^a   Tominaga, M ^a   Yamamoto, Y ^a   Agata, Y ^a   Suzuki, K ^b  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b HOKKAIDO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

CdTe; Epitaxial layer; Heterojunction diode; Radiation detector; Spectroscopic detectors

Indexed keywords

CADMIUM COMPOUNDS; DIODES; EPITAXIAL GROWTH; HETEROJUNCTIONS; LEAKAGE CURRENTS; RADIATION DETECTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

CDTE LAYERS; EPITAXIAL LAYERS; HETEROJUNCTION DIODES; NUCLEAR RADIATION DETECTORS; SPECTROSCOPIC DETECTORS;

THICK FILMS;

EID: 21644437596     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0026-4     Document Type: Conference Paper

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