Growth of thick CdTe epilayers on GaAs substrates and evaluation of CdTe/n+-GaAs heterojunction diodes for an x-ray imaging detector

Journal of Electronic Materials

Volumn 33, Issue 6, 2004, Pages 645-650

  Niraula, M ^a   Yasuda, K ^a   Nakanishi, Y ^a   Uchida, K ^a   Mabuchi, T ^a   Agata, Y ^a   Suzuki, K ^b  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b HOKKAIDO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

CdTe thick layers; Metal organic vapor phase epitaxy (MOVPE); X ray imaging detector

Indexed keywords

ATMOSPHERIC PRESSURE; CADMIUM ALLOYS; DETECTORS; DOPING (ADDITIVES); ELECTRIC EXCITATION; HETEROJUNCTIONS; IMAGING TECHNIQUES; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES; SINGLE CRYSTALS; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

CDTE THICK LAYERS; DOUBLE-CRYSTAL ROCKING CURVES (DCRC); FULL-WIDTH AT HALF-MAXIMUM (FWHM); X-RAY IMAGING DETECTORS;

THICK FILMS;

EID: 3042828655     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0060-7     Document Type: Conference Paper

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