Metal-organic vapor-phase epitaxy growth and characterization of thick (100) CdTe layers on (100) GaAs and (100) GaAs/Si substrates

Journal of Electronic Materials

Volumn 32, Issue 7, 2003, Pages 728-732

  Niraula, M ^a   Yasuda, K ^a   Ishiguro, T ^a   Kawauchi, Y ^a   Morishita, H ^a   Agata, Y ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

CdTe; Epitaxy; Metal organic vapor phase epitaxy (MOVPE); X ray imaging detector

Indexed keywords

HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SILICON; STRESS ANALYSIS; X RAYS;

X-RAY IMAGING DETECTORS;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0041766159     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0060-z     Document Type: Conference Paper

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