Growth characteristics of (100) HgCdTe layers in low-temperature MOVPE with ditertiarybutyltelluride

Journal of Crystal Growth

Volumn 166, Issue 1-4, 1996, Pages 612-616

  Yasuda, K ^a   Hatano, H ^a   Ferid, T ^a   Minamide, M ^a   Maejima, T ^a   Kawamoto, K ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING TELLURIUM; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMODYNAMIC STABILITY;

DIMETHYLCADMIUM; DITERTIARYBUTYLTELLURIDE; MERCURY VAPOR;

MERCURY COMPOUNDS;

EID: 0030230786     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00536-6     Document Type: Article

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