Growth of CdTe on hydrogen-terminated Si(111)

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 5-8

  Seto, S ^a   Yamada, S ^a   Suzuki, K ^b  

^a ISHIKAWA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b HOKKAIDO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); ELECTRON MICROSCOPY; LIGHT REFLECTION; PHOTOLUMINESCENCE; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING SILICON; STRAIN; SUBSTRATES; SURFACE PHENOMENA; TEMPERATURE; X RAY DIFFRACTION ANALYSIS;

HOT WALL EPITAXY; HYDROGEN TERMINATED SILICON; SECONDARY ELECTRON MICROSCOPY;

FILM GROWTH;

EID: 0033715091     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00039-7     Document Type: Article

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