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Volumn 85, Issue 10, 2004, Pages 1829-1831
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Multiple-bit storage properties of porphyrin monolayers on SiO 2
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Author keywords
[No Author keywords available]
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Indexed keywords
CHARGE-STORAGE STATES;
GATE ELECTRODES;
MULTIPLE-BIT STORAGE;
THERMAL OXIDES;
CAPACITANCE;
CYCLIC VOLTAMMETRY;
DATA STORAGE EQUIPMENT;
MONOLAYERS;
OXIDATION;
PORPHYRINS;
REDUCTION;
SELF ASSEMBLY;
SILICA;
SOLUTIONS;
CAPACITORS;
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EID: 4944265079
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1782254 Document Type: Article |
Times cited : (46)
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References (11)
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