Molecular devices formed by direct monolayer attachment to silicon

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 1747-1752

  Richter, C A ^a   Hacker, C A ^a   Richter, L J ^a   Vogel, E M ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELLIPSOMETRY; INFRARED SPECTROSCOPY; MONOLAYERS; SILICON; SPECTROMETRY; ULTRAVIOLET RADIATION;

ALIPHATIC MOLECULES; DOPANTS; ORGANIC MOLECULES;

SOLID STATE DEVICES;

EID: 3142693616     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.009     Document Type: Conference Paper

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