A comparative study of the electrical properties of heavily AI implanted, single crystalline and nanocrystalline SiC

Journal of Applied Physics

Volumn 99, Issue 12, 2006, Pages

  Heera, V ^a   Madhusoodanan, K N ^a,d   Skorupa, W ^a   Dubois, C ^b   Romanus, H ^c  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^c ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^d Department of Physics   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; DOPING (ADDITIVES); ION BEAMS; NANOSTRUCTURED MATERIALS; SUBSTRATES; SUPERSATURATION;

BAND CONDUCTION; ELECTRICAL PROPERTIES; HALL EFFECT MEASUREMENTS; NANOCRYSTALLINE SIC;

SILICON CARBIDE;

EID: 33745685324     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2208299     Document Type: Article

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