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Volumn 423, Issue , 1996, Pages 661-666
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Theory and realization of a two-layer Hall effect measurement concept for characterization of epitaxial and implanted layers of SiC
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Author keywords
[No Author keywords available]
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Indexed keywords
CAPACITANCE MEASUREMENT;
CARRIER CONCENTRATION;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC INSULATION;
EPITAXIAL GROWTH;
HALL EFFECT;
ION IMPLANTATION;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING FILMS;
SEMICONDUCTING SILICON COMPOUNDS;
SUBSTRATES;
VOLTAGE MEASUREMENT;
TWO LAYER HALL EFFECT;
VAN DER PAUW METHOD;
SILICON CARBIDE;
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EID: 0030389582
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-423-661 Document Type: Conference Paper |
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Times cited : (8)
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References (5)
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