Temperature dependence of conductivity and Hall carrier concentration of polycrystalline SiC deposited on fused silica by laser ablation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 1, 1998, Pages 142-146

  Abu Ageel, N ^a   Aslam, D M ^a   Ager, R ^b   Rimai, L ^b  

^a Michigan State University   (United States)

^b FORD RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003091103     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589769     Document Type: Article

References (20)

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