Hall effect investigations of 4H-SiC epitaxial layers grown on semi-insulating and conducting substrates

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 389-394

  Schoner A ^a   Karlsson, S ^a   Schmitt, T ^a   Nordell, N ^a   Linnarsson, M ^b   Rottner, K ^c  

^a IMC   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c ABB CORPORATE RESEARCH   (Sweden)

Author keywords

4H silicon carbide; Epitaxial growth; Hall effect; Semi insulating substrate; Two layer Hall effect model

Indexed keywords

SEMI-INSULATING SUBSTRATES; VAN DER PAUW HALL EFFECT MEASUREMENTS;

ALUMINUM; CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; EPITAXIAL GROWTH; HALL EFFECT; NITROGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SUBSTRATES; VOLTAGE MEASUREMENT;

SILICON CARBIDE;

EID: 0032679267     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00540-6     Document Type: Article

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