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Journal of Applied Physics

Volumn 99, Issue 12, 2006, Pages

Al composition dependent properties of quaternary AlInGaN Schottky diodes

(5) Liu, Y a Jiang, H a Egawa, T a Zhang, B a Ishikawa, H a

a NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON TRANSITIONS; ELECTRON TUNNELING; GALLIUM NITRIDE; PALLADIUM; PHOTOLUMINESCENCE; POLARIZATION; X RAY DIFFRACTION;

ALXIN0.02GA0.98-XN/GAN; BARRIER INHOMOGENEITY THEORY; FLATBAND BARRIER HEIGHT; IMAGE FORCE EFFECT; SCHOTTKY-MOTT THEORY;

SCHOTTKY BARRIER DIODES;

EID: 33745683335 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2206609 Document Type: Article

Times cited : (10)

References (48)

1
- 0001149622
- M. Asif Khan, J. N. Kuznia, R. A. Skongman, D. T. Olson, M. Mac Millan, and W. J. Choyke, Appl. Phys. Lett. 61, 2539 (1992).
- (1992) Appl. Phys. Lett. , vol.61 , pp. 2539
- Asif Khan, M.¹ Kuznia, J.N.² Skongman, R.A.³ Olson, D.T.⁴ Mac Millan, M.⁵ Choyke, W.J.⁶

2
- 0842288132
- K. Joshin, T. Kikkawa, H. Hayahsi, T. Maniwa, S. Yokokawa, M. Yokoyama, N. Adachi, and M. Takikawa, Tech. Dig. - Int. Electron Devices Meet. 2003, 983.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2003 , pp. 983
- Joshin, K.¹ Kikkawa, T.² Hayahsi, H.³ Maniwa, T.⁴ Yokokawa, S.⁵ Yokoyama, M.⁶ Adachi, N.⁷ Takikawa, M.⁸

3
- 0142038457
- O. Ambacher et al., J. Appl. Phys. 87, 334 (2000).
- (2000) J. Appl. Phys. , vol.87 , pp. 334
- Ambacher, O.¹

4
- 0001348454
- M. Asif Khan et al., Appl. Phys. Lett. 76, 1161 (2000).
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1161
- Asif Khan, M.¹

5
- 22644450888
- E. T. Yu, X. Z. Dang, P. M. Asbeck, S. S. Lau, and G. J. Sullivan, J. Vac. Sci. Technol. B 17, 1742 (1999).
- (1999) J. Vac. Sci. Technol. B , vol.17 , pp. 1742
- Yu, E.T.¹ Dang, X.Z.² Asbeck, P.M.³ Lau, S.S.⁴ Sullivan, G.J.⁵

6
- 0642275027
- F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, R10024 (1997).
- (1997) Phys. Rev. B , vol.56
- Bernardini, F.¹ Fiorentini, V.² Vanderbilt, D.³

7
- 20844450872
- Y. Liu, H. Jiang, S. Arulkumaran, T. Egawa, B. Zhang, and H. Ishikawa, Appl. Phys. Lett. 86, 223510 (2005).
- (2005) Appl. Phys. Lett. , vol.86 , pp. 223510
- Liu, Y.¹ Jiang, H.² Arulkumaran, S.³ Egawa, T.⁴ Zhang, B.⁵ Ishikawa, H.⁶

8
- 0035886143
- B. J. Zhang, T. Egawa, G. Y. Zhao, H. Ishikawa, M. Umeno, and T. Jimbo, Appl. Phys. Lett. 79, 2567 (2001).
- (2001) Appl. Phys. Lett. , vol.79 , pp. 2567
- Zhang, B.J.¹ Egawa, T.² Zhao, G.Y.³ Ishikawa, H.⁴ Umeno, M.⁵ Jimbo, T.⁶

9
- 0000610808
- L. Wang, M. I. Nathan, T. H. Lim, M. A. Kan, and Q. Chen, Appl. Phys. Lett. 68, 1267 (1996).
- (1996) Appl. Phys. Lett. , vol.68 , pp. 1267
- Wang, L.¹ Nathan, M.I.² Lim, T.H.³ Kan, M.A.⁴ Chen, Q.⁵

10
- 4644231751
- N. Kubota, J. Ao, D. Kikuta, and Y. Ohno, Jpn. J. Appl. Phys., Part 1 43, 4159 (2004).
- (2004) Jpn. J. Appl. Phys., Part 1 , vol.43 , pp. 4159
- Kubota, N.¹ Ao, J.² Kikuta, D.³ Ohno, Y.⁴

11
- 18544371655
- E. Monroy et al., Semicond. Sci. Technol. 17, L47 (2002).
- (2002) Semicond. Sci. Technol. , vol.17
- Monroy, E.¹

12
- 0001331365
- E. Monroy, F. Calle, J. L. Pau, F. J. Sanchez, E. Munoz, F. Omnes, B. Beaumont, and P. Gibart, J. Appl. Phys. 88, 2081 (2000).
- (2000) J. Appl. Phys. , vol.88 , pp. 2081
- Monroy, E.¹ Calle, F.² Pau, J.L.³ Sanchez, F.J.⁴ Munoz, E.⁵ Omnes, F.⁶ Beaumont, B.⁷ Gibart, P.⁸

13
- 0031075943
- M. Khan, H. Nakayama, T. Detchprohm, K. Hiramatsu, and N. Sawaki, Solid-State Electron. 41, 287 (1997).
- (1997) Solid-state Electron. , vol.41 , pp. 287
- Khan, M.¹ Nakayama, H.² Detchprohm, T.³ Hiramatsu, K.⁴ Sawaki, N.⁵

14
- 0032637268
- L. Zhou, A. T. Ping, K. Boutros, J. Redwing, and I. Adesida, Electron. Lett. 35, 745 (1999).
- (1999) Electron. Lett. , vol.35 , pp. 745
- Zhou, L.¹ Ping, A.T.² Boutros, K.³ Redwing, J.⁴ Adesida, I.⁵

15
- 0000722194
- D. Qiao, L. S. Yu, S. S. Lau, J. M. Redwing, J. Y. Lin, and H. X. Jiang, J. Appl. Phys. 87, 801 (2000).
- (2000) J. Appl. Phys. , vol.87 , pp. 801
- Qiao, D.¹ Yu, L.S.² Lau, S.S.³ Redwing, J.M.⁴ Lin, J.Y.⁵ Jiang, H.X.⁶

16
- 0002007655
- A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, D. W. Greve, M. Skowronski, M. Shin, and J. M. Redwing, MRS Internet J. Nitride Semicond. Res. 3, 37 (1998).
- (1998) MRS Internet J. Nitride Semicond. Res. , vol.3 , pp. 37
- Polyakov, A.Y.¹ Smirnov, N.B.² Govorkov, A.V.³ Greve, D.W.⁴ Skowronski, M.⁵ Shin, M.⁶ Redwing, J.M.⁷

17
- 0038396381
- V. Kumar, D. Selvanathan, A. Kuliev, S. Kim, J. Flynn, and I. Adesida, Electron. Lett. 39, 747 (2003).
- (2003) Electron. Lett. , vol.39 , pp. 747
- Kumar, V.¹ Selvanathan, D.² Kuliev, A.³ Kim, S.⁴ Flynn, J.⁵ Adesida, I.⁶

18
- 18644377686
- L. S. Yu, Q. J. Xing, D. Qiao, S. S. Lau, K. S. Boutros, and J. M. Redwing, Appl. Phys. Lett. 73, 3917 (1998).
- (1998) Appl. Phys. Lett. , vol.73 , pp. 3917
- Yu, L.S.¹ Xing, Q.J.² Qiao, D.³ Lau, S.S.⁴ Boutros, K.S.⁵ Redwing, J.M.⁶

19
- 0000542663
- E. T. Yu et al., Appl. Phys. Lett. 73, 1880 (1998).
- (1998) Appl. Phys. Lett. , vol.73 , pp. 1880
- Yu, E.T.¹

20
- 0037455226
- C. M. Jeon, H. W. Jang, and J. Lee, Appl. Phys. Lett. 82, 391 (2003).
- (2003) Appl. Phys. Lett. , vol.82 , pp. 391
- Jeon, C.M.¹ Jang, H.W.² Lee, J.³

21
- 0742320697
- C. M. Jeon and J. Lee, Appl. Phys. Lett. 95, 698 (2004).
- (2004) Appl. Phys. Lett. , vol.95 , pp. 698
- Jeon, C.M.¹ Lee, J.²

22
- 1242321244
- N. Miura et al., Solid-State Electron. 48, 689 (2004).
- (2004) Solid-state Electron. , vol.48 , pp. 689
- Miura, N.¹

23
- 0038110830
- C. M. Jeon and J. Lee, Appl. Phys. Lett. 82, 4301 (2003).
- (2003) Appl. Phys. Lett. , vol.82 , pp. 4301
- Jeon, C.M.¹ Lee, J.²

24
- 23944493160
- A. Sozza, C. Dua, E. Morvan, B. Grimbert, M. A. di Forte-Poisson, S. L. Delage, and E. Zanoni, Electron. Lett. 41, 927 (2005).
- (2005) Electron. Lett. , vol.41 , pp. 927
- Sozza, A.¹ Dua, C.² Morvan, E.³ Grimbert, B.⁴ Di Forte-Poisson, M.A.⁵ Delage, S.L.⁶ Zanoni, E.⁷

25
- 17144444540
- T. Nanjo et al., Jpn. J. Appl. Phys., Part 1 43, 1925 (2004).
- (2004) Jpn. J. Appl. Phys., Part 1 , vol.43 , pp. 1925
- Nanjo, T.¹

26
- 0037773319
- Z. Lin, W. Lu, J. Lee, D. Liu, J. S. Flynn, and G. R. Brandes, Appl. Phys. Lett. 82, 4364 (2003).
- (2003) Appl. Phys. Lett. , vol.82 , pp. 4364
- Lin, Z.¹ Lu, W.² Lee, J.³ Liu, D.⁴ Flynn, J.S.⁵ Brandes, G.R.⁶

27
- 20444462011
- Y. Liu, T. Egawa, H. Jiang, B. Zhang, H. Ishikawa, and M. Hao, Appl. Phys. Lett. 85, 6030 (2004).
- (2004) Appl. Phys. Lett. , vol.85 , pp. 6030
- Liu, Y.¹ Egawa, T.² Jiang, H.³ Zhang, B.⁴ Ishikawa, H.⁵ Hao, M.⁶

28
- 3142768440
- Y. Liu, T. Egawa, H. Ishikawa, B. Zhang, and M. Hao, Jpn. J. Appl. Phys., Part 1 43, 2414 (2004).
- (2004) Jpn. J. Appl. Phys., Part 1 , vol.43 , pp. 2414
- Liu, Y.¹ Egawa, T.² Ishikawa, H.³ Zhang, B.⁴ Hao, M.⁵

29
- 0003546026
- Clarendon, Oxford
- E. H. Rhoderick and R. W. Williams, Metal-Semiconductor Contacts, 2nd ed. (Clarendon, Oxford, 1988), p. 38.
- (1988) Metal-semiconductor Contacts, 2nd Ed. , pp. 38
- Rhoderick, E.H.¹ Williams, R.W.²

30
- 0030410873
- S. N. Mohammad and H. Morkoc, Prog. Quantum Electron. 20, 361 (1996).
- (1996) Prog. Quantum Electron. , vol.20 , pp. 361
- Mohammad, S.N.¹ Morkoc, H.²

31
- 36449008979
- V. W. L. Chin, T. L. Tansley, and T. Osotchan, J. Appl. Phys. 75, 7365 (1994).
- (1994) J. Appl. Phys. , vol.75 , pp. 7365
- Chin, V.W.L.¹ Tansley, T.L.² Osotchan, T.³

32
- 0003546026
- (Ref. 29)
- Metal-Semiconductor Contacts (Ref. 29), p. 11.
- Metal-semiconductor Contacts , pp. 11

33
- 36449000631
- M. W. Wang, J. O. McCaldin, J. F. Swenberg, T. C. McGill, and R. J. Hauenstein, Appl. Phys. Lett. 66, 1974 (1995).
- (1995) Appl. Phys. Lett. , vol.66 , pp. 1974
- Wang, M.W.¹ McCaldin, J.O.² Swenberg, J.F.³ McGill, T.C.⁴ Hauenstein, R.J.⁵

34
- 0003546026
- (Ref. 29)
- Metal-Semiconductor Contacts (Ref. 29), p. 42.
- Metal-semiconductor Contacts , pp. 42

35
- 0004237593
- Cambridge University Press, Cambridge
- E. F. Schubert, Doping in III-V Semiconductors (Cambridge University Press, Cambridge, 1993), p. 492.
- (1993) Doping in III-V Semiconductors , pp. 492
- Schubert, E.F.¹

36
- 0011715992
- H. C. Card and E. H. Rhoderick, J. Phys. D 4, 1589 (1971).
- (1971) J. Phys. D , vol.4 , pp. 1589
- Card, H.C.¹ Rhoderick, E.H.²

37
- 0003546026
- (Ref. 29)
- Metal-Semiconductor Contacts (Ref. 29), p. 118.
- Metal-semiconductor Contacts , pp. 118

38
- 0003546026
- (Ref. 29)
- Metal-Semiconductor Contacts (Ref. 29), p. 109.
- Metal-semiconductor Contacts , pp. 109

39
- 0006790332
- R. F. Broom, H. P. Meir, and W. Walter, J. Appl. Phys. 60, 1832 (1986).
- (1986) J. Appl. Phys. , vol.60 , pp. 1832
- Broom, R.F.¹ Meir, H.P.² Walter, W.³

40
- 0014809437
- V. L. Rideout and C. R. Crowell, Solid-State Electron. 13, 993 (1970).
- (1970) Solid-state Electron. , vol.13 , pp. 993
- Rideout, V.L.¹ Crowell, C.R.²

41
- 36449000058
- J. H. Werner and H. H. Guttler, J. Appl. Phys. 69, 1522 (1991).
- (1991) J. Appl. Phys. , vol.69 , pp. 1522
- Werner, J.H.¹ Guttler, H.H.²

42
- 3342986527
- R. T. Tung, Phys. Rev. B 45, 13509 (1992).
- (1992) Phys. Rev. B , vol.45 , pp. 13509
- Tung, R.T.¹

43
- 0003546026
- (Ref. 29)
- Metal-Semiconductor Contacts (Ref. 29), p. 111.
- Metal-semiconductor Contacts , pp. 111

44
- 0003546026
- (Ref. 29)
- Metal-Semiconductor Contacts (Ref. 29), p. 36.
- Metal-semiconductor Contacts , pp. 36

45
- 0031552806
- P. G. Eliseev, P. Perlin, J. Lee, and M. Osinski, Appl. Phys. Lett. 71, 569 (1997).
- (1997) Appl. Phys. Lett. , vol.71 , pp. 569
- Eliseev, P.G.¹ Perlin, P.² Lee, J.³ Osinski, M.⁴

46
- 2442486860
- A. Bell et al., J. Appl. Phys. 95, 4670 (2004).
- (2004) J. Appl. Phys. , vol.95 , pp. 4670
- Bell, A.¹

47
- 9944226614
- M. Miyoshi, M. Sakai, H. Ishikawa, T. Egawa, T. Jimbo, M. Tanaka, and O. Oda, J. Cryst. Growth 272, 293 (2004).
- (2004) J. Cryst. Growth , vol.272 , pp. 293
- Miyoshi, M.¹ Sakai, M.² Ishikawa, H.³ Egawa, T.⁴ Jimbo, T.⁵ Tanaka, M.⁶ Oda, O.⁷

48
- 0004071496
- Wiley-Interscience, New York
- D. K. Schroder, Semiconductor Material and Device Characterization, 2nd ed. (Wiley-Interscience, New York, 1998), p. 136.
- (1998) Semiconductor Material and Device Characterization, 2nd Ed. , pp. 136
- Schroder, D.K.¹

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