MOVPE growth and characterization of high-Al-content AlGaN/GaN heterostructures on 100-mm-diameter sapphire substrates

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 293-299

  Miyoshi, Makoto ^a,b   Sakai, Masahiro ^a,b   Ishikawa, Hiroyasu ^a   Egawa, Takashi ^a   Jimbo, Takashi ^a   Tanaka, Mitsuhiro ^b   Oda, Osamu ^b  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b NGK INSULATORS LTD   (Japan)

Author keywords

A1. Characterization; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CHARACTERIZATION; ELECTRON GAS; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; SAPPHIRE; SEMICONDUCTOR MATERIALS;

GAS-PHASE REACTION; SEMICONDUCTING III-V MATERIALS; SHEET RESISTANCE; TRIMETHYLALUMINIUM (TMA);

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 9944226614     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.117     Document Type: Conference Paper

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