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Journal of Applied Physics

Volumn 87, Issue 2, 2000, Pages 801-804

Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction

(6) Qiao, D a Yu, L S a Lau, S S a Redwing, J M b Lin, J Y c Jiang, H X c

a UNIVERSITY OF CALIFORNIA (United States)

b Epitronics/ATMI (United States)

c KANSAS STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000722194 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.371944 Document Type: Article

Times cited : (154)

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