Schottky barrier height determination by capacitance-voltage measurement on n-GaN with exponential doping profile

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 7 A, 2004, Pages 4159-4160

  Kubota, Naotaka ^a   Ao, Jin Ping ^a   Kikuta, Daigo ^a   Ohno, Yasuo ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

C V method; Cu; GaN; Ni Au; Schottky barrier height; Schottky diode

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; COPPER; CURVE FITTING; FERMI LEVEL; IMPURITIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POISSON EQUATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; VOLTAGE MEASUREMENT;

BUFFER LAYERS; CAPACIATNCE-VOLTAGE (C-V) METHOD; EPITAXIAL STRUCTURES; SCHOTTKY BARRIER HEIGHT;

GALLIUM NITRIDE;

EID: 4644231751     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.4159     Document Type: Article

References (9)

1. S. M. Sze: Physics of Semiconductor Devices (John Willy & Sons, New York, 1981) 2nd ed.
2. D. R. Decker: J. Electrochem. Soc.; Solid State Sci. 115 (1968) 1085.
3. C. O. Thomas, D. Kahng and R. C. Manz: J. Electrochem. Soc. 109 (1962) 1055.
4. L. Wang, M. I. Nathan, T.-H. Lim, M. A. Khan and Q. Chen: Appl. Phys. Lett. 68 (1996) 1267.
5. A. C. Schmitz, A. T. Ping, M. Asif Khan, Q. Chen J. W. Yang and I. Adesida: J. Electron. Mater. 27 (1996) 255.
6. J.-P. Ao, D. Kikuta, N. Kubota, Y. Naoi and Y. Ohno: IEEE Electron Device Lett. 24 (2003) 500.
7. J.-P. Ao, N. Kubota, H.-X. Wang, Y.-H. Liu, D. Kikuta, Y. Naoi, S. Sakai and Y. Ohno: (submitted).
8. Q. Z. Liu, L. S. Yu, F. Deng, S. S. Lau and J. M. Redwing: J. Appl. Phys. 84 (1998) 881.
9. B. J. Zhang, T. Egawa, G. Y. Zhao, H. Ishikawa, M. Umeno and T. Jimbo: Appl. Phys. Lett. 79 (2001) 2567.