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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 5 A, 2004, Pages 2414-2418

Influence of growth temperature on quaternary AlInGaN epilayers for ultraviolet emission grown by metalorganic chemical vapor deposition

(5) Liu, Yang a Egawa, Takashi a Ishikawa, Hiroyasu a Zhang, Baijun a Hao, Maosheng a

a NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

AlInGaN; III V semiconductor; Localization effect; MOCVD; Quaternary; Temperature dependence of photoluminescence

Indexed keywords

ATOMIC FORCE MICROSCOPY; BINDING ENERGY; CRYSTALLINE MATERIALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; ULTRAVIOLET RADIATION; X RAY DIFFRACTION;

ALLNGAN; LOCALIZATION EFFECT; QUATERNARY; TEMPERATURE DEPENDENCE OF PHOTOLUMINESCENCE;

SEMICONDUCTING GALLIUM;

EID: 3142768440 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.2414 Document Type: Article

Times cited : (19)

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