Improvement of DC and RF characteristics of AlGaN/GaN high electron mobility transistors by thermally annealed Ni/Pt/Au schottky gate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 1925-1929

  Nanjo, Takuma ^a   Miura, Naruhisa ^a   Oishi, Toshiyuki ^a   Suita, Muneyoshi ^a   Abe, Yuji ^a   Ozeki, Tatsuo ^a   Nakatsuka, Shigenori ^a   Indue, Akira ^a   Ishikawa, Takahide ^a   Matsuda, Yoshio ^a   Ishikawa, Hiroyasu ^b   Egawa, Takashi ^b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AIGaN GaN HEMT; Annealing; GaN; Gate leakage current; Off state breakdown; Schottky

Indexed keywords

ANNEALING; DEPOSITION; ELECTRIC BREAKDOWN; FREQUENCIES; GALLIUM NITRIDE; LEAKAGE CURRENTS; METALLIZING; OSCILLATIONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS;

ALGAN/GAN HEMT; GATE LEAKAGE CURRENT; OFF-STATE BREAKDOWN; OHMIC METALLIZATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 17144444540     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.1925     Document Type: Conference Paper

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