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Volumn 24, Issue 4, 2006, Pages 1380-1385

Effects of N2 addition on chemical dry etching of silicon oxide layers in F2/N2/Ar remote plasmas

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; LIGHT EMISSION; NITROGEN; PLASMA ETCHING; REACTION KINETICS; SUBSTRATES;

EID: 33745507999     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2206190     Document Type: Article
Times cited : (12)

References (32)
  • 24
    • 33745497695 scopus 로고    scopus 로고
    • Sixth International Conference on Greenhouse Gas Control Technologies (GHGT-6), Kyoto, Japan, 3 October
    • T. Beppu, Y. Mitsui, K. Sakai, and A. Sekiya, Sixth International Conference on Greenhouse Gas Control Technologies (GHGT-6), Kyoto, Japan, 3 October 2002 (unpublished), p. G5-4.
    • (2002)
    • Beppu, T.1    Mitsui, Y.2    Sakai, K.3    Sekiya, A.4
  • 25


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.