Effect of N-containing additive gases on global warming gas emission during remote plasma cleaning process of silicon nitride PECVD chamber using C4F8/O2/Ar chemistry

Surface and Coatings Technology

Volumn 171, Issue 1-3, 2003, Pages 267-272

  Oh, C H ^a   Lee, N E ^a   Kim, J H ^a   Yeom, G Y ^a   Yoon, S S ^b   Kwon, T K ^b  

^a Sungkyunkwan University   (South Korea)

^b Jusung Engineering Company Limited   (South Korea)

Author keywords

C4F8; Global warming effect; Remote plasma chamber cleaning; Silicon nitride

Indexed keywords

GAS EMISSIONS; GLOBAL WARMING; OPTIMIZATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA THEORY; SURFACES;

PLASMA CLEANING;

SILICON NITRIDE;

CLEANING; GLOBAL WARMING; PLASMA TREATMENT; SILICON NITRIDE;

EID: 0037706762     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(03)00284-6     Document Type: Article

References (14)

1. Kastenmeier B.E.E. Oehrlein G.S. Langan J.G. Entley W.R. J. Vac. Sci. Technol. A 18 5 2000 2102
2. Tsai W.T. Chen H.H. Hsien W.Y. J. Loss Prev. Process Industries 15 2002 65
3. Zazzera L. Kesari S. Reagen W. Tousignant L. Holber W. Chen X. Electrochemical Soc. Proc. 98 1999 10
4. M.T. Mocella, ISESH Eighth Conference, 18 (2001).
5. Pruette L. Karecki S. Reif R. et-al. J. Electrochem. Soc. 147 3 2000 1149
6. Kastenmeier B.E.E. Matsuo P.J. Oehrlein G.S. J. Vac. Sci. Technol. A 16 4 1998 2047
7. Pruette L. Karecki S. Reif R. et-al J. Electrochem Solid-State Lett. 2 11 1999 592
8. Matsuo P.J. Kastenmeier B.E.E. Beulens J.J. Oehrlein G.S. J. Vac. Sci. Technol. A 15 4 1997 1801
9. Raoux S. Tanaka T. Bhan M. et-al J. Vac. Sci. Technol. B 17 2 1999 477
10. Beulens J.J. Kastenmeier B.E.E. Matsuo P.J. Oehrlein G.S. Appl. Phys. Lett. 66 20 1995 2634
11. Blain M.G. Meisenheimer T.L. Stevens J.E. J. Vac. Sci. Technol. A 14 4 1996 2151
12. Kastenmeier B.E.E. Matsuo P.J. Beulens J.J. Oehrlein G.S. J. Vac. Sci. Technol. A 14 5 1996 2802
13. Kastenmeier B.E.E. Matsuo P.J. Oehrlein G.S. Ellefson R.E. Frees L.C. J. Vac. Sci. Technol. A 19 1 2001 25
14. Blain M.G. J. Vac. Sci. Technol. A 17 2 1999 665