Effect of O2(CO2)/C4F8O gas combinations on global warming gas emission in silicon nitride PECVD plasma cleaning

Surface and Coatings Technology

Volumn 146-147, Issue , 2001, Pages 522-527

  Oh, B H ^a   Bae, J W ^a   Kim, J H ^a   Kim, K J ^a   Ahn, Y S ^a   Lee, N E ^a   Yeom, G Y ^a   Yoon, S S ^b   Chae, S K ^c   Ku, M S ^a   Lee, S G ^c   Cho, D H ^c  

^a Sungkyunkwan University   (South Korea)

^b Jusung Engineering Company Limited   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

Global warming gas; Perfluorocompound; Plasma enhanced chemical vapor deposition (PECVD)

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CLEANING; GAS EMISSIONS; SILICON NITRIDE;

PLASMA CLEANING;

GLOBAL WARMING;

PLASMA TREATMENT;

EID: 0035465768     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(01)01463-3     Document Type: Article

References (11)