Increase of cleaning rate and reduction in global warming effect during C4F8O/O2 remote plasma cleaning of silicon nitride by adding NO and N2O

Thin Solid Films

Volumn 435, Issue 1-2, 2003, Pages 264-269

  Oh, C H ^a   Lee, N E ^a   Kim, J H ^a   Yeom, G Y ^a   Yoon, S S ^b   Kwon, T K ^b  

^a Sungkyunkwan University   (South Korea)

^b Jusung Engineering Company Limited   (South Korea)

Author keywords

C4F8O; Chamber cleaning; Global warming effect; Remote plasma cleaning; Silicon nitride

Indexed keywords

CHEMICAL VAPOR DEPOSITION; INDUCTIVELY COUPLED PLASMA; PLASMA ETCHING; REDUCTION; SILICON NITRIDE;

CHAMBER CLEANING;

CHEMICAL CLEANING;

EID: 0038009043     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00397-3     Document Type: Conference Paper

References (12)

1. International Technology Roadmap for Semiconductors, 248 (1999).
2. Tsai W.T., Chen H.H., Hsien W.Y. J. Loss Prevent. Proc. 15:2002;65-75.
3. L. Zazzera, S. Kesari, W. Reagen, L. Tousignant, W. Holber, X. Chen, Electrochemical Society Proceedings (1999) 99-8, 10-19.
4. M.T. Mocella, ISESH Eighth Conference (2001) 18-20.
5. Pruette L., Karecki S., Reif R., Tousignant L., Reagan W., Kesari S., Zazzera L. J. Electrochem. Soc. 147:(3):2000;1149.
6. Kastenmeier B.E.E., Matsuo P.J., Oehrlein G.S. J. Vac. Sci. Technol. A. 16:(4):1998;2047.
7. Matsuo P.J., Kastenmeier B.E.E., Beulens J.J., Oehrlein G.S. J. Vac. Sci. Technol. A. 15:(4):1997;1801.
8. Raoux S., Tanaka T., Bhan M., Ponnekanti H., Seamons M., Deacon T., Xia L.-Q., Pham F., Silvetti D., Cheung D., Fairbairn K. J. Vac. Sci. Technol. B. 17:(2):1999;477.
9. Beulens J.J., Kastenmeier B.E.E., Matsuo P.J., Oehrlein G.S. Appl. Phys. Lett. 66:(20):1995;2634.
10. Blain M.G., Meisenheimer T.L., Stevens J.E. J. Vac. Sci. Technol. A. 14:(4):1996;2151.
11. Kastenmeier B.E.E., Matsuo P.J., Beulens J.J., Oehrlein G.S. J. Vac. Sci. Technol. A. 14:(5):1996;2802.
12. Kastenmeier B.E.E., Matsuo P.J., Oehrlein G.S., Ellefson R.E., Frees L.C. J. Vac. Sci. Technol. A. 19:(1):2001;25.