Variations in the physico-chemical properties of near-stoichiometric silica deposited from SiH4-N2O and SiH4-N 2O-He radiofrequency discharges

Thin Solid Films

Volumn 471, Issue 1-2, 2005, Pages 53-62

  Chayani, M ^a   Caquineau, H ^a   Despax, B ^a   Bandet, J ^b   Berjoan, R ^c  

^a UNIVERSITÉ PAUL SABATIER   (France)

^b Laboratoire de Physique des Solides   (France)

^c Centre National de la Recherche Scientifique   (France)

Author keywords

Amorphous silica; IR; PECVD; Physicochemical properties

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL MODIFICATION; HYDROLYSIS; INFRARED SPECTROSCOPY; LOW TEMPERATURE EFFECTS; MATHEMATICAL MODELS; MIXTURES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; STOICHIOMETRY; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS SILICA; ELECTRON RECOIL DETECTION ANALYSIS (ERDA); PECVD; PHYSICOCHEMICAL PROPERTIES;

SILICA;

EID: 10644281448     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.04.063     Document Type: Article

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