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Volumn 22, Issue 2, 2004, Pages 678-681
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Size-dependent resonant tunneling and storing of electrons in a nanocrystalline silicon floating-gate double-barrier structure
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CAPACITANCE;
ELECTRON ENERGY LEVELS;
EQUIVALENT CIRCUITS;
MORPHOLOGY;
NANOSTRUCTURED MATERIALS;
OHMIC CONTACTS;
OXIDATION;
PERMITTIVITY;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
RESONANT TUNNELING;
SEMICONDUCTOR QUANTUM DOTS;
SILICA;
SILICON WAFERS;
TRANSMISSION ELECTRON MICROSCOPY;
CAPACITANCE SPECTROSCOPY;
COULOMB BLOCKADES;
PLASMA OXIDATION;
QUANTUM-CONFINEMENT EFFECTS;
SEMICONDUCTOR DEVICE STRUCTURES;
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EID: 2342483749
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1676527 Document Type: Article |
Times cited : (20)
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References (10)
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