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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2230-2234

Effects of post-deposition annealing on the electrical properties of HfSiO films grown by atomic layer deposition

(10) Cho, Hag Ju a Lee, Hye Lan a Park, Hong Bae a Jeon, Taek Soo a Park, Seong Geon a Jin, Beom Jun a Kang, Sang Bom a Shin, Yu Gyun a Chung, U In a Moon, Joo Tae a

a SAMSUNG Electronics (South Korea)

Author keywords

Atomic layer deposition; HfSiO; HfSiON; High k gate dielectrics; N2 annealing; NH3 annealing; Post deposition annealing

Indexed keywords

AMMONIA; ANNEALING; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; FILM GROWTH; HAFNIUM COMPOUNDS; TEMPERATURE DISTRIBUTION; THICKNESS MEASUREMENT;

ATOMIC LAYER DEPOSITION; HFSIO; HFSION; HIGH-K GATE DIELECTRICS; N2 ANNEALING; NH3 ANNEALING; POST-DEPOSITION ANNEALING;

THIN FILMS;

EID: 21244488206 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.44.2230 Document Type: Conference Paper

Times cited : (5)

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