Hf1-xSixO2 deposition by metal organic chemical vapor deposition using the Hf(NEt2)4/SiH(NEt2)3/O2 gas system

Thin Solid Films

Volumn 416, Issue 1-2, 2002, Pages 208-211

  Ohshita, Yoshio ^a   Ogura, Atsushi ^b   Ishikawa, Masato ^c   Hoshino, Asako ^c   Hiiro, Shigeki ^c   Suzuki, Toshie ^c   Machida, Hideaki ^c  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b NEC CORPORATION   (Japan)

^c TRI Chemical Laboratory Inc   (Japan)

Author keywords

Chemical vapor deposition (CVD); Dielectrics; Electronic devices; Metal oxide semiconductor structure (MOS)

Indexed keywords

AMORPHOUS FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; REFRACTIVE INDEX; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

METAL OXIDE SEMICONDUCTOR (MOS) STRUCTURE;

THIN FILMS;

EID: 0037009739     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00705-8     Document Type: Article

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