Effects of rapid thermal annealing in vacuum on electrical properties of thin Ta2O5-Si structures

Microelectronics Journal

Volumn 31, Issue 8, 2000, Pages 653-661

  Spassov, D ^a   Atanassova, E ^a   Beshkov, G ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; ELECTRIC INSULATORS; GROWTH (MATERIALS); LEAKAGE CURRENTS; PERMITTIVITY; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; TANTALUM COMPOUNDS; THERMOOXIDATION; THIN FILMS;

FIXED OXIDE CHARGES; HIGH DIELECTRIC CONSTANT INSULATORS;

MICROELECTRONICS;

EID: 0034249859     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(00)00044-6     Document Type: Article

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