Physically based quantum - Mechanical compact model of MOS devices substrate-injected tunneling current through ultrathin (EOT ∼ 1nm) SiO2 and high-k gate stacks

IEEE Transactions on Electron Devices

Volumn 53, Issue 5, 2006, Pages 1096-1106

  Li, Fei ^a   Mudanai, Sivakumar P ^b   Fan, Yang Yu ^c   Register, Leonard Franklin ^d   Banerjee, Sanjay K ^d  

^a SYNOPSYS INC   (United States)

^b INTEL CORPORATION   (United States)

^c Lovoltech Inc   (United States)

^d The University of Texas at Austin   (United States)

Author keywords

Direct tunneling; Fowler Nordheim (F N) tunneling; Franz two band model; High k gate dielectrics; Leakage currents; MOS devices; Quantum mechanical effects; Wentzel Kramers Brillouin (WKB) theory

Indexed keywords

DIELECTRIC MATERIALS; GATES (TRANSISTOR); LEAKAGE CURRENTS; MATHEMATICAL MODELS; PERMITTIVITY; QUANTUM THEORY;

COMPACT MODEL; DIRECT TUNNELING; FOWLER-NORDHEIM (F-N) TUNNELING; FRANZ TWO-BAND MODEL; GATE DIELECTRICS; QUANTUM-MECHANICAL EFFECTS; WENTZEL-KRAMERS-BRILLOUIN (WKB) THEORY;

MOS DEVICES;

EID: 33646065357     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.871877     Document Type: Article

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