Deep-submicron CMOS process integration of HfO2 gate dielectric with poly-si gate

2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

Volumn , Issue , 2001, Pages 377-380

  Lu, Qiang ^a   Lin, R ^a   Takeuchi, H ^a   King, Tsu Jae ^a   Hu, Chenming ^a   Onishi, K ^b   Choi, Rino ^b   Kang, Chang Seok ^b   Lee, J C ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; GATE DIELECTRICS; HAFNIUM OXIDES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DEVICES;

CMOS PROCESSS; DEEP SUBMICRON CMOS; DEVICE CHARACTERISTICS; GATE LEAKAGES; GATE LENGTH; GATE MATERIALS; GATE OXIDE THICKNESS; POLY-SI GATES;

RECONFIGURABLE HARDWARE;

EID: 84961795092     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2001.984521     Document Type: Conference Paper

References (7)

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