Characterization of crack-free relaxed GaN grown on 2″ sapphire

Journal of Applied Physics

Volumn 98, Issue 7, 2005, Pages

  Kasic, A ^a,c   Gogova, D ^a,d   Larsson, H ^a   Ivanov, I ^a   Hemmingsson, C ^a   Yakimova, R ^a   Monemar, B ^a   Heuken, M ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b AIXTRON AG   (Germany)

^c INFINEON TECHNOLOGIES AG   (Germany)

^d BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE REACTORS; PHONON SPECTRA; PHOTOLUMINESCENCE MAPPING; SAPPHIRE SUBSTRATES;

ATMOSPHERIC PRESSURE; BOUNDARY LAYERS; CRACKS; ELLIPSOMETRY; GALLIUM NITRIDE; INFRARED SPECTROSCOPY; PHOTOLUMINESCENCE; SAPPHIRE; VAPOR PHASE EPITAXY;

CRYSTAL GROWTH;

EID: 27144516749     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2064311     Document Type: Article

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