Structural and electrical characteristics of low-dielectric constant porous hydrogen silsesquioxane for Cu metallization

Journal of the Electrochemical Society

Volumn 150, Issue 8, 2003, Pages

  Wang, J H ^a   Chen, W J ^b   Chang, T C ^c,d   Liu, P T ^d   Cheng, S L ^a   Lin, J Y ^b   Chen, L J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^d NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; COPPER; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LEAKAGE CURRENTS; METALLIZING; PERMITTIVITY; POROSITY; POROUS MATERIALS; TRANSMISSION ELECTRON MICROSCOPY;

CAPACITANCE VOLTAGE ANALYZER; CURRENT VOLTAGE ANALYZER; POROUS HYDROGEN SILSESQUIOXANE;

HYDROGEN INORGANIC COMPOUNDS;

EID: 0041707838     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1585054     Document Type: Article

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