Low damage ashing using H2/He plasma for porous ultra low-k

Proceedings of the IEEE 2003 International Interconnect Technology Conference, IITC 2003

Volumn , Issue , 2003, Pages 147-149

  Matsushita, A ^a   Ohashi, N ^a   Inukai, K ^a   Shin, H J ^a   Sone, S ^a   Sudou, K ^a   Misawa, K ^a   Matsumoto, I ^a   Kobayashi, N ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

Character generation; Degradation; Fabrication; Gases; Helium; Leakage current; Plasma applications; Plasma properties; Plasma temperature; Temperature dependence

Indexed keywords

DEGRADATION; FABRICATION; GASES; HELIUM; INTEGRATED CIRCUIT INTERCONNECTS; LEAKAGE CURRENTS; PLASMA APPLICATIONS; TEMPERATURE DISTRIBUTION;

65-NM TECHNOLOGIES; CHARACTER GENERATION; PLASMA CONFIGURATION; PLASMA PROPERTIES; PLASMA TEMPERATURE; POROUS ULTRA LOW-K; TEMPERATURE DEPENDENCE; WIRING CAPACITANCE;

PLASMA DIAGNOSTICS;

EID: 84944058137     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2003.1219737     Document Type: Conference Paper

References (3)

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3. L.H.Chen, S.Hoshino, T.Hayakawa, K.Maekawa, and K.Inazawa Proc. Symp. Dry Process, 27(2002)