Reduction of oxygen plasma damage by postdeposition helium plasma treatment for carbon-doped silicon oxide low dielectric constant films

Electrochemical and Solid-State Letters

Volumn 6, Issue 1, 2003, Pages

  Wang, Y H ^a   Gui, D ^a   Kumar, R ^a   Foo, P D ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBON; DOPING (ADDITIVES); FOURIER TRANSFORM INFRARED SPECTROSCOPY; HELIUM; OXYGEN; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; THICKNESS MEASUREMENT;

CARBON DOPED SILICON OXIDE; FILM THICKNESS; LOW DIELECTRIC CONSTANT FILM; OXYGEN PLASMA DAMAGE; PLASMA TREATMENT;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0037238763     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1525493     Document Type: Article

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