Effect of pore sealing on the reliability of ULK/Cu interconnects

Proceedings of the IEEE 2004 International Interconnect Technology Conference

Volumn , Issue , 2004, Pages 148-150

  Guedj, C ^a   Arnaud, L ^a   Fayolle, M ^a   Jousseaume, V ^a   Guillaumond, J F ^a,b   Cluzel, J ^a   Toffoli, A ^a   Reimbold, G ^a   Bouchu, D ^a  

^a CEA GRENOBLE   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COPPER; ELECTROMIGRATION; ION BEAMS; METALLIZING; MOISTURE; PERMITTIVITY; POROUS MATERIALS; SCANNING ELECTRON MICROSCOPY; SEALING (CLOSING);

PORE SEALING; TEMPERATURE COEFFICIENT OF RESISTANCE (TCR);

DIELECTRIC MATERIALS;

EID: 8644256013     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. International Technology Roadmap for Semiconductors, (ITRS2003) Semiconductor Industry Association, San Jose, CA, http://public.itrs.net/
2. T. Mourier, V. Jousseaume, F. Fusalba, Ch. Lecornec, P. Maury, G. Passemard, PH. Haumesser, S. Maîtrejean, M. Cordeau, R. Pantel, F. Pierre, M. Fayolle, H. Feldis, Proc. DTC 2003, San Fransisco, p 245
3. L. Arnaud, J.F. Gutllaumond, O. Pesci, M. Fayolle, G. Reimbold, Proc. IITC 2003, San Fransisco, p 30
4. K.D. Lee, E.T. Ogawa, S. Yoon, P.S. Ho, Appl. Phys. Lett., 82, 2003,p 2032
5. C.K. Hu, L. Gignac, E. Iiniger, B. Herbst, D.L. Rath, Appl. Phys. Lett., 83, 2003, p. 869