Al2O3/Si3N4 stacked insulators for 0.1 μm gate metal-oxide-semiconductor transistors realized by high-density Si3N4 buffer layers

Applied Physics Letters

Volumn 82, Issue 22, 2003, Pages 3931-3933

  Fujisaki, Yoshihisa ^a,b   Iseki, Kunie ^b   Ishiwara, Hiroshi ^b   Mao, Ming ^c   Bubber, Randhir ^c  

^a R and D Assoc Fut Electron Devices   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c VEECO INSTRUMENTS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ELECTRIC INSULATORS; LEAKAGE CURRENTS; SILICON NITRIDE; SUBSTRATES; ULTRATHIN FILMS;

ATOMIC LAYER DEPOSITION;

MOS DEVICES;

EID: 0037970018     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1579850     Document Type: Article

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