Oxide engineering of ZnO thin-film transistors for flexible electronics

Journal of the Society for Information Display

Volumn 13, Issue 7, 2005, Pages 547-554

  Carcia, P F ^a   McLean, R S ^a   Reilly, M H ^a  

^a DUPONT COMPANY   (United States)

Author keywords

Aluminum oxide dielectric; Oxygen vacancy; Transistor; Zinc oxide

Indexed keywords

ALUMINUM OXIDE DIELECTRIC; AMORPHOUS; ATOMIC LAYERS; BEAM EVAPORATIONS; ELECTRONIC APPLICATIONS; FLEXIBLE ELECTRONICS; HIGH-PERFORMANCE; MACROELECTRONICS; MOBILE CARRIERS; NANOCRYSTALLINE ZNO; ORGANIC; PARTIAL PRESSURE OF OXYGENS; PLASTIC SUBSTRATES; POLYIMIDE SUBSTRATES; RF MAGNETRONS; SI SUBSTRATES; TRANSPORT MODELS; VACANCY CONTENTS; ZNO TRANSISTORS;

ABS RESINS; ALUMINA; AMORPHOUS SILICON; ATOMIC LAYER DEPOSITION; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; NANOSTRUCTURED MATERIALS; OXIDES; OXYGEN; OXYGEN VACANCIES; PLASTICS; POLYIMIDES; POLYMERS; PULSED LASER DEPOSITION; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; STOICHIOMETRY; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS; VACANCIES; ZINC; ZINC ALLOYS; ZINC OXIDE;

SUBSTRATES;

EID: 33645547162     PISSN: 10710922     EISSN: None     Source Type: Journal    
DOI: 10.1889/1.2012634     Document Type: Article

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