Admittance spectroscopy of traps at the interfaces of (1 0 0)Si with Al2O3, ZrO2, and HfO2

Microelectronics Reliability

Volumn 45, Issue 5-6, 2005, Pages 823-826

  Truong, L ^a   Fedorenko, Y G ^a   Afanasev V V ^a   Stesmans, A ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; ELECTRON SPIN RESONANCE SPECTROSCOPY; ELECTRON TRAPS; INSULATING MATERIALS; INTERFACES (MATERIALS); MOS CAPACITORS; PASSIVATION; PERMITTIVITY; RAPID THERMAL ANNEALING; SILICON;

ADMITTANCE SPECTROSCOPY; ENERGY DISTRIBUTION; INTERFACE TRAP DENSITY; POST-DEPOSITION ANNEALING (PDA);

ELECTRIC ADMITTANCE;

EID: 14644413560     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.11.039     Document Type: Conference Paper

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