SCOPUS 정보 검색 플랫폼

Materials Science and Engineering: B

Volumn 107, Issue 3, 2004, Pages 251-254

Physical properties of ALD-Al2O3 in a DRAM-capacitor equivalent structure comparing interfaces and oxygen precursors

(6) Jakschik, S a,b Schroeder, U a Hecht, T a Dollinger, G c Bergmaier, A c Bartha, J W b

a INFINEON TECHNOLOGIES AG (Germany)

b DRESDEN UNIVERSITY OF TECHNOLOGY (Germany)

c TECHNICAL UNIVERSITY OF MUNICH (Germany)

Author keywords

ALD; Aluminum oxide; Dielectric; Interfaces; Structural properties

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; CRYSTALLIZATION; DEPOSITION; DIELECTRIC FILMS; DIFFUSION; ELASTICITY; GRAIN SIZE AND SHAPE; INTERFACES (MATERIALS); TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); STRUCTURAL PROPERTIES;

ALUMINA;

EID: 1542305382 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2003.09.044 Document Type: Article

Times cited : (20)

References (7)

1
- 85166118008
- San Francisco
- 3 Trench Capacitor DRAM for Sub-100 nm Technology, San Francisco.
- 3 Trench Capacitor DRAM for Sub-100 nm Technology
- Seidl, H.¹ Gutsche, M.² Schroeder, U.³ Birner, A.⁴ Hecht, T.⁵ Jakschik, S.⁶ Luetzen, J.⁷ Kerber, M.⁸ Kudelka, S.⁹ Popp, T.¹⁰ Orth, A.¹¹ Reisinger, H.¹² Saenger, A.¹³ Schupke, K.¹⁴ Sell, B.¹⁵

2
- 35148821130
- Physical Characterization of High-k Gate Stacks Deposited on HF-Last Surfaces
- Japan
- H. Bender, T. Conard, H. Nohira, J. Petry, O. Richard, C. Zhao, B. Brijs, W. Besling, C Detavernier, W. Vandervorst, M. Caymax, S. De Gendt, J. Chen, J. Kluth, J.W. Tsai, Maes, Physical Characterization of High-k Gate Stacks Deposited on HF-Last Surfaces, International Workshop on Gate Insulator (IWGI), 2001, Japan, 2001.
- (2001) International Workshop on Gate Insulator (IWGI), 2001
- Bender, H.¹ Conard, T.² Nohira, H.³ Petry, J.⁴ Richard, O.⁵ Zhao, C.⁶ Brijs, B.⁷ Besling, W.⁸ Detavernier, C.⁹ Vandervorst, W.¹⁰ Caymax, M.¹¹ De Gendt, S.¹² Chen, J.¹³ Kluth, J.¹⁴ Tsai, J.W.¹⁵ Maes¹⁶

3
- 0036902483
- Kim J.B., Kwong D.R., Chakrabarti K., Lee C., Oh K.Y., Lee J.H., J. Appl. Phys. 92(11):2002;6739-6742.
- (2002) J. Appl. Phys. , vol.92 , Issue.11 , pp. 6739-6742
- Kim, J.B.¹ Kwong, D.R.² Chakrabarti, K.³ Lee, C.⁴ Oh, K.Y.⁵ Lee, J.H.⁶

4
- 79955998808
- Guha S., Gusev E.P., Okorn-Schmidt H., Copel M., Ragnarsson L.-A., Bojarczuk N.A., Appl. Phys. Lett. 81(16):2002;2956-2958.
- (2002) Appl. Phys. Lett. , vol.81 , Issue.16 , pp. 2956-2958
- Guha, S.¹ Gusev, E.P.² Okorn-Schmidt, H.³ Copel, M.⁴ Ragnarsson, L.-A.⁵ Bojarczuk, N.A.⁶

5
- 0036567721
- Gosset L.G., Damlencourt J.F., Renault O., Rouchon D., Holliger Ph., Ermolie A., Trimaille I., Ganem J.-J., Martin F., Semeria M.-N., J. Non-Cryst. Solids. 303:2002;17-23.
- (2002) J. Non-cryst. Solids , vol.303 , pp. 17-23
- Gosset, L.G.¹ Damlencourt, J.F.² Renault, O.³ Rouchon, D.⁴ Holliger, Ph.⁵ Ermolie, A.⁶ Trimaille, I.⁷ Ganem, J.-J.⁸ Martin, F.⁹ Semeria, M.-N.¹⁰

6
- 0037415948
- Jakschik S., Schroeder U., Hecht T., Gutsche M., Seidl H., Bartha J.W., Thin Solid Films. 425:2003;216-220.
- (2003) Thin Solid Films , vol.425 , pp. 216-220
- Jakschik, S.¹ Schroeder, U.² Hecht, T.³ Gutsche, M.⁴ Seidl, H.⁵ Bartha, J.W.⁶

7
- 0035397948
- Neumaier P., Dollinger G., Bergmaier A., Genchev I., Goergens L., Fischer R., Ronning C., Hofsäss H., Nucl. Instr. Meth. B. 183:2001;48.
- (2001) Nucl. Instr. Meth. B , vol.183 , pp. 48
- Neumaier, P.¹ Dollinger, G.² Bergmaier, A.³ Genchev, I.⁴ Goergens, L.⁵ Fischer, R.⁶ Ronning, C.⁷ Hofsäss, H.⁸

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.