메뉴 건너뛰기




Volumn 99, Issue 4, 2006, Pages

Performance evaluation of picosecond high-voltage power switches based on propagation of superfast impact ionization fronts in SiC structures

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC LOADS; ELECTRIC POTENTIAL; ELECTRIC SWITCHES; MATHEMATICAL MODELS; PARAMETER ESTIMATION; SILICON CARBIDE;

EID: 33644622735     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2161823     Document Type: Article
Times cited : (9)

References (43)
  • 4
    • 23844542420 scopus 로고    scopus 로고
    • 1063-7826 10.1134/1.2010676
    • P. A. Ivanov, M. E. Levinshtein, T. T. Mnatsakanov, J. W. Palmour, and A. K. Agarwal, Semiconductors 1063-7826 10.1134/1.2010676 39, 861 (2005) P. A. Ivanov, M. E. Levinshtein, T. T. Mnatsakanov, J. W. Palmour, and A. K. Agarwal, [Fiz. Tekh. Poluprovodn. (S.-Peterburg) 39, 897 (2005)].
    • (2005) Semiconductors , vol.39 , pp. 861
    • Ivanov, P.A.1    Levinshtein, M.E.2    Mnatsakanov, T.T.3    Palmour, J.W.4    Agarwal, A.K.5
  • 19
    • 0040795771 scopus 로고    scopus 로고
    • A. F. Kardo-Susoev and M. V. Popova, 30, 431 (1996) A. F. Kardo-Susoev and M. V. Popova, [Fiz. Tekh. Poluprovodn. (S.-Peterburg) 30, 803 (1996)].
    • (1996) , vol.30 , pp. 431
    • Kardo-Susoev, A.F.1    Popova, M.V.2
  • 23
    • 0001088921 scopus 로고
    • L. B. Loeb, Science 148, 1417 (1965).
    • (1965) Science , vol.148 , pp. 1417
    • Loeb, L.B.1
  • 25
    • 0000481566 scopus 로고
    • 0038-5646
    • M. I. D'yakonov and V. Yu. Kachorovskii, Sov. Phys. JETP 0038-5646 67, 1049 (1988). M. I. D'yakonov and V. Yu. Kachorovskii, [Zh. Eksp. Teor. Fiz. 94, 321 (1988)].
    • (1988) Sov. Phys. JETP , vol.67 , pp. 1049
    • D'yakonov, M.I.1    Kachorovskii, V.Yu.2
  • 27
    • 0042226331 scopus 로고
    • 0038-5646
    • M. I. D'yakonov and V. Yu. Kachorovskii, Sov. Phys. JETP 0038-5646 68, 1070 (1989) M. I. D'yakonov and V. Yu. Kachorovskii, [Zh. Eksp. Teor. Fiz. 95, 1850 (1989)].
    • (1989) Sov. Phys. JETP , vol.68 , pp. 1070
    • D'Yakonov, M.I.1    Kachorovskii, V.Yu.2
  • 29
    • 4143124419 scopus 로고    scopus 로고
    • 0031-9007 10.1103/PhysRevLett.77.4178
    • U. Ebert, W. van Saarloos, and C. Caroli, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.77.4178 77, 4178 (1996); U. Ebert, W. van Saarloos, and C. Caroli, Phys. Rev. E 55, 1530 (1997).
    • (1996) Phys. Rev. Lett. , vol.77 , pp. 4178
    • Ebert, U.1    Van Saarloos, W.2    Caroli, C.3
  • 30
    • 4143143102 scopus 로고    scopus 로고
    • U. Ebert, W. van Saarloos, and C. Caroli, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.77.4178 77, 4178 (1996); U. Ebert, W. van Saarloos, and C. Caroli, Phys. Rev. E 55, 1530 (1997).
    • (1997) Phys. Rev. e , vol.55 , pp. 1530
    • Ebert, U.1    Van Saarloos, W.2    Caroli, C.3
  • 32
    • 0040513138 scopus 로고    scopus 로고
    • 1063-7826 10.1134/1.1187164
    • A. M. Minarsky and P. B. Rodin, Semiconductors 1063-7826 10.1134/1.1187164 31, 366 (1997) A. M. Minarsky and P. B. Rodin, [Fiz. Tekh. Poluprovodn. (S.-Peterburg) 31, 432 (1997)].
    • (1997) Semiconductors , vol.31 , pp. 366
    • Minarsky, A.M.1    Rodin, P.B.2
  • 34
    • 33644626376 scopus 로고    scopus 로고
    • For semiconductor materials where impact ionization coefficients and saturated velocities of electron and holes are comparable, α0 should be replaced by 2 α0. However, this does not change the order of magnitude values of vf and N.
    • For semiconductor materials where impact ionization coefficients and saturated velocities of electron and holes are comparable, α0 should be replaced by 2 α0. However, this does not change the order of magnitude values of vf and N.
  • 37
    • 0034196193 scopus 로고    scopus 로고
    • 1063-7826 10.1134/1.1188051
    • A. M. Minarsky and P. Rodin, Semiconductors 1063-7826 10.1134/1.1188051 34, 665 (2000) A. M. Minarsky and P. Rodin, [Fiz. Tekh. Poluprovodn. (S.-Peterburg) 34, 692 (2000)].
    • (2000) Semiconductors , vol.34 , pp. 665
    • Minarsky, A.M.1    Rodin, P.2
  • 41
    • 17744386777 scopus 로고    scopus 로고
    • 1063-7850 10.1134/1.1894430
    • S. K. Lyubutin, S. N. Rukin, B. G. Slovikovsky, and S. N. Tsyranov, Tech. Phys. Lett. 1063-7850 10.1134/1.1894430 31, 196 (2005) S. K. Lyubutin, S. N. Rukin, B. G. Slovikovsky, and S. N. Tsyranov, [Pis'ma Zh. Tekh. Fiz. 31, 36 (2005)].
    • (2005) Tech. Phys. Lett. , vol.31 , pp. 196
    • Lyubutin, S.K.1    Rukin, S.N.2    Slovikovsky, B.G.3    Tsyranov, S.N.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.