메뉴 건너뛰기




Volumn , Issue , 2005, Pages 1-208

Breakdown phenomena in semiconductors and semiconductor devices

Author keywords

[No Author keywords available]

Indexed keywords


EID: 85115722731     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1142/5877     Document Type: Book
Times cited : (75)

References (214)
  • 1
    • 36149024459 scopus 로고
    • Theory of electron multiplication in silicon and germanium
    • Wolf, P. A. (1954). Theory of electron multiplication in silicon and germanium, Phys. Rev., 95, 6, pp. 1415-1420.
    • (1954) Phys. Rev. , vol.95 , Issue.6 , pp. 1415-1420
    • Wolf, P.A.1
  • 3
    • 0023315129 scopus 로고
    • Impact ionization in AmBv semiconductors in high electric fields
    • Dmitriev, A. P., Mikhailova, M. P., and Yassievich, I. N. (1987). Impact ionization in AmBv semiconductors in high electric fields, phys. stat. solidi (b) 140, pp. 9-37.
    • (1987) phys. stat. solidi (b) , vol.140 , pp. 9-37
    • Dmitriev, A.P.1    Mikhailova, M.P.2    Yassievich, I.N.3
  • 4
    • 0017923388 scopus 로고
    • The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs
    • Pearsall, T. P., Capasso F., Nahory, R. E., Pollack, M. A., and Chelikowsky, J. R. (1978). The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs, Sol. State Electron., 21, pp. 297-302.
    • (1978) Sol. State Electron. , vol.21 , pp. 297-302
    • Pearsall, T.P.1    Capasso, F.2    Nahory, R.E.3    Pollack, M.A.4    Chelikowsky, J.R.5
  • 5
    • 0020139319 scopus 로고
    • Probability of impact ionization in silicon
    • Dmitriev, A. P. (1982). Probability of impact ionization in silicon, Sov. Phys. Semicond., 16, 6, pp. 629-631.
    • (1982) Sov. Phys. Semicond. , vol.16 , Issue.6 , pp. 629-631
    • Dmitriev, A.P.1
  • 6
    • 0001202975 scopus 로고
    • Kinetic theory of impact ionization in semiconductors
    • Keldysh, L. V. (1960). Kinetic theory of impact ionization in semiconductors, Sov. Phys.
    • (1960) Sov. Phys.
    • Keldysh, L.V.1
  • 10
    • 0041529419 scopus 로고
    • Monte-Carlo calculation of hot electron problems
    • Suppl. 21
    • Kurosawa, T. (1966). Monte-Carlo calculation of hot electron problems, Journ. Phys. Soc. Jpn., Suppl. 21, pp. 424-426.
    • (1966) Journ. Phys. Soc. Jpn. , pp. 424-426
    • Kurosawa, T.1
  • 11
    • 0002861764 scopus 로고
    • Problems related to p-n junctions in silicon
    • Shockley, W. (1961). Problems related to p-n junctions in silicon, Sol. State Electron., 2, 1, pp. 35-60.
    • (1961) Sol. State Electron. , vol.2 , Issue.1 , pp. 35-60
    • Shockley, W.1
  • 12
    • 0001376374 scopus 로고
    • Distribution functions and ionization rates for hot electrons in semiconductors
    • Phys. Rev., 133, 1A, A26-A33
    • Baraff, G.A.(1962, 1964). Distribution functions and ionization rates for hot electrons in semiconductors, Phys. Rev., 128, 6, pp. 2507-2517; Phys. Rev., 133, 1A, A26-A33.
    • (1962) Phys. Rev. , vol.128 , Issue.6 , pp. 2507-2517
    • Baraff, G.A.1
  • 15
    • 85012611281 scopus 로고
    • Physics of Avalanche Photodiodes
    • ed. by R.K. Willardson and A.C. Beer, 22 (Lightwave Communication Technology. Part D-Photodetectors), Academic Press
    • Capasso, F. (1985). Physics of Avalanche Photodiodes, in Semiconductors and Semimetals, ed. by R.K. Willardson and A.C. Beer, 22 (Lightwave Communication Technology. Part D-Photodetectors), Academic Press, pp. 2-172.
    • (1985) Semiconductors and Semimetals , pp. 2-172
    • Capasso, F.1
  • 16
    • 0025442415 scopus 로고
    • Impact ionization in silicon: A review and update
    • Maes, W., De Meyer, K., Van Overstraeten, R. (1990). Impact ionization in silicon: A review and update, Sol. State. Electron., 33, 6, pp. 705-718.
    • (1990) Sol. State. Electron. , vol.33 , Issue.6 , pp. 705-718
    • Maes, W.1    Meyer, D.K.2    Overstraeten, V.R.3
  • 17
    • 0015673363 scopus 로고
    • Electron and hole ionization rates in epitaxial silicon at high electric fields
    • Grant, W. N. (1973). Electron and hole ionization rates in epitaxial silicon at high electric fields, Sol. State Electron., 16, 10, pp. 1189-1203.
    • (1973) Sol. State Electron. , vol.16 , Issue.10 , pp. 1189-1203
    • Grant, W.N.1
  • 22
    • 0020299674 scopus 로고
    • Theoretical basis for field calculations on multidimensional reverse biased semiconductor devices
    • Adler, M. S., Temple, V. A. K., Rustay, R. C. (1982). Theoretical basis for field calculations on multidimensional reverse biased semiconductor devices, Sol. State. Electron., 25, 12, pp. 1179-1186.
    • (1982) Sol. State. Electron. , vol.25 , Issue.12 , pp. 1179-1186
    • Adler, M.S.1    Temple, V.A.K.2    Rustay, R.C.3
  • 23
    • 0020115602 scopus 로고
    • Methods of avoiding edge effects on semiconductor devices, (Re view)
    • Tove, P. A. (1982). Methods of avoiding edge effects on semiconductor devices, (Re view), Journ. Phys. D, 15, 4, pp. 517-536.
    • (1982) Journ. Phys. D , vol.15 , Issue.4 , pp. 517-536
    • Tove, P.A.1
  • 24
    • 0034215133 scopus 로고    scopus 로고
    • Fringing field of high-voltage planar p-i-n diodes with non-uniformly doped guard ring
    • Kyuregyan, A. S. (2000). Fringing field of high-voltage planar p-i-n diodes with non-uniformly doped guard ring, Semiconductors, 34, 7, pp. 835-844.
    • (2000) Semiconductors , vol.34 , Issue.7 , pp. 835-844
    • Kyuregyan, A.S.1
  • 25
    • 0343526838 scopus 로고    scopus 로고
    • Demonstration of the first 4H-SiC avalanche photodiodes
    • Yan, F., Zhao, J. H., Olsen, G. H. (2000). Demonstration of the first 4H-SiC avalanche photodiodes, Sol. State. Electron., 44, 2, pp. 341-346.
    • (2000) Sol. State. Electron. , vol.44 , Issue.2 , pp. 341-346
    • Yan, F.1    Zhao, J.H.2    Olsen, G.H.3
  • 27
    • 84944485155 scopus 로고
    • The theory of p-n junction in semiconductors and p-n junction transistors
    • Shockley, W. (1949). The theory of p-n junction in semiconductors and p-n junction transistors, Bell Syst. Tech. Journal, 28, 3, pp. 435-489.
    • (1949) Bell Syst. Tech. Journal , vol.28 , Issue.3 , pp. 435-489
    • Shockley, W.1
  • 28
    • 84927553170 scopus 로고
    • Carrier generation and recombina tion in p-n junction and p-n junction characteristics
    • Sah, C. T., Noyce, R. N., and Shockley, W. (1957). Carrier generation and recombina tion in p-n junction and p-n junction characteristics, Proc. IRE, 45, 9, pp. 1228-1243.
    • (1957) Proc. IRE , vol.45 , Issue.9 , pp. 1228-1243
    • Sah, C.T.1    Noyce, R.N.2    Shockley, W.3
  • 29
    • 0000512292 scopus 로고
    • Avalanche-photodiode frequency response
    • Emmons, R. (1967). Avalanche-photodiode frequency response, Journ. Appl. Phys., 38, 9, pp. 3705-3714.
    • (1967) Journ. Appl. Phys. , vol.38 , Issue.9 , pp. 3705-3714
    • Emmons, R.1
  • 31
    • 0012305279 scopus 로고
    • Crystal orientation dependence of ionization rates in germanium
    • Mikawa, T., Kagawa, S., Kaneda, T., Toyama, Y., and Mikami, O. (1980). Crystal orientation dependence of ionization rates in germanium, Appl. Phys. Lett., 37, 4, pp. 387-389.
    • (1980) Appl. Phys. Lett. , vol.37 , Issue.4 , pp. 387-389
    • Mikawa, T.1    Kagawa, S.2    Kaneda, T.3    Toyama, Y.4    Mikami, O.5
  • 32
    • 0002622512 scopus 로고    scopus 로고
    • Ionization rates and critical fields in 4H silicon carbide
    • Konstantinov, A. O., Wahab, Q., Nordell, N., and Lindefelt, U. (1997). Ionization rates and critical fields in 4H silicon carbide, Appl. Phys. Lett, 71, 1, pp. 90-92.
    • (1997) Appl. Phys. Lett , vol.71 , Issue.1 , pp. 90-92
    • Konstantinov, A.O.1    Wahab, Q.2    Nordell, N.3    Lindefelt, U.4
  • 33
    • 0000388575 scopus 로고    scopus 로고
    • Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN
    • Oguzman, I. H., Bellotti, E., Brennan, K. F., Kolnik, J., Wang, R., and Ruden, P.P. (1997). Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN, Journ. Appl. Phys., 81, 12, pp. 7827-7834.
    • (1997) Journ. Appl. Phys. , vol.81 , Issue.12 , pp. 7827-7834
    • Oguzman, I.H.1    Bellotti, E.2    Brennan, K.F.3    Kolnik, J.4    Wang, R.5    Ruden, P.P.6
  • 35
    • 0033079457 scopus 로고    scopus 로고
    • Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
    • Raghunathan, R., and Baliga, B. J. (1999). Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC, Sol. State Electron., 43, 2, pp. 199-211.
    • (1999) Sol. State Electron. , vol.43 , Issue.2 , pp. 199-211
    • Raghunathan, R.1    Baliga, B.J.2
  • 36
    • 77957053521 scopus 로고
    • Silicon and Germanium Avalanche Photodiodes
    • ed. by R.K. Willardson and A.C. Beer, 22 (Lightwave Communication Technology. Part D-Photodetectors), Academic Press
    • Kaneda, T. (1985). Silicon and Germanium Avalanche Photodiodes, in Semiconductors and Semimetals, ed. by R.K. Willardson and A.C. Beer, 22 (Lightwave Communication Technology. Part D-Photodetectors), Academic Press, pp. 247-328.
    • (1985) Semiconductors and Semimetals , pp. 247-328
    • Kaneda, T.1
  • 38
    • 0031102997 scopus 로고    scopus 로고
    • Positive Temperature Coefficient of Breakdown Voltage in 4H-SiC PN Junction Rectifiers
    • Neudeck, P. G., and Fazi, C. (1997). Positive Temperature Coefficient of Breakdown Voltage in 4H-SiC PN Junction Rectifiers, IEEE Electron Device Letters, 18, 3, pp. 96-98.
    • (1997) IEEE Electron Device Letters , vol.18 , Issue.3 , pp. 96-98
    • Neudeck, P.G.1    Fazi, C.2
  • 39
    • 0000235739 scopus 로고    scopus 로고
    • Temperature dependence of avalanche breakdown for epitaxial diodes in 4H silicon carbide
    • Konstantinov, A. O., Nordell, N., Wahab, Q., and Lindefelt, U. (1998). Temperature dependence of avalanche breakdown for epitaxial diodes in 4H silicon carbide, Appl. Phys. Lett, 73, 13, pp. 1850-1852.
    • (1998) Appl. Phys. Lett , vol.73 , Issue.13 , pp. 1850-1852
    • Konstantinov, A.O.1    Nordell, N.2    Wahab, Q.3    Lindefelt, U.4
  • 40
    • 0020182824 scopus 로고
    • The channeling avalanche photodiode: A novel ultra-low-noise integrated p-n junction detector
    • ED-29
    • Capasso, F. (1982). The channeling avalanche photodiode: a novel ultra-low-noise integrated p-n junction detector, IEEE Trans. Electron Devices, ED-29, pp. 1388-1395.
    • (1982) IEEE Trans. Electron Devices , pp. 1388-1395
    • Capasso, F.1
  • 44
    • 84922644221 scopus 로고
    • Multiplication noise in uniform avalanche diodes
    • ED-13, 1
    • Mclntyre, R. J. (1966). Multiplication noise in uniform avalanche diodes, IEEE Trans. Electron Devices, ED-13, 1, pp. 164-168.
    • (1966) IEEE Trans. Electron Devices , pp. 164-168
    • Mclntyre, R.J.1
  • 45
    • 33645632404 scopus 로고
    • Low noise avalanche photodiodes by channeling of 800-keV boron into < 110 > silicon
    • Kaneda, T., Kagawa, S., Yamaoka, T., Nishi, H., and Inada, T. (1978). Low noise avalanche photodiodes by channeling of 800-keV boron into < 110 > silicon, Joum. Appl. Phys., 49, 12, pp. 6199-6200.
    • (1978) Joum. Appl. Phys. , vol.49 , Issue.12 , pp. 6199-6200
    • Kaneda, T.1    Kagawa, S.2    Yamaoka, T.3    Nishi, H.4    Inada, T.5
  • 46
    • 0003307823 scopus 로고
    • Editors
    • (Lightwave Communication Technology. Part D-Photodetectors), Academic Press
    • Willardson, R. K., and Beer, A. C. (1985). Editors, Semiconductors and Semimetals, 22 (Lightwave Communication Technology. Part D-Photodetectors), Academic Press.
    • (1985) Semiconductors and Semimetals , pp. 22
    • Willardson, R.K.1    Beer, A.C.2
  • 47
    • 0002861764 scopus 로고
    • Problems related to P-N junctions in silicon
    • Shockley, W. (1961). Problems related to P-N junctions in silicon, Sol. State. Electron., 2, 1, pp. 35-60.
    • (1961) Sol. State. Electron. , vol.2 , Issue.1 , pp. 35-60
    • Shockley, W.1
  • 48
    • 33645629626 scopus 로고
    • Microplasma breakdown in germanium
    • Poleschuk, M., and Dowling, P. H. (1963). Microplasma breakdown in germanium, Journ. Appl. Phys., 34, 10, pp. 3069-3077.
    • (1963) Journ. Appl. Phys. , vol.34 , Issue.10 , pp. 3069-3077
    • Poleschuk, M.1    Dowling, P.H.2
  • 49
    • 29244449783 scopus 로고
    • Theory of microplasma instability in silicon
    • Mclntyre, R. J. (1961). Theory of microplasma instability in silicon, Journ. Appl. Phys., 32, 6, pp. 983-995.
    • (1961) Journ. Appl. Phys. , vol.32 , Issue.6 , pp. 983-995
    • Mclntyre, R.J.1
  • 50
    • 36849142227 scopus 로고
    • Model for electrical behavior of a microplasma
    • Haitz, R. H. (1964). Model for electrical behavior of a microplasma, Journ. Appl. Phys., 35, 5, pp. 1370-1376.
    • (1964) Journ. Appl. Phys. , vol.35 , Issue.5 , pp. 1370-1376
    • Haitz, R.H.1
  • 51
    • 33645630056 scopus 로고
    • A review of the effect of imperfections on the electrical breakdown of p-n junctions
    • Kressel, H. (1967). A review of the effect of imperfections on the electrical breakdown of p-n junctions, RCA Rev., 28, 2, pp. 175-207.
    • (1967) RCA Rev. , vol.28 , Issue.2 , pp. 175-207
    • Kressel, H.1
  • 52
    • 84983840210 scopus 로고
    • On the physiscs of avalanche breakdown in semiconductors
    • Monch, W. (1969). On the physiscs of avalanche breakdown in semiconductors, phys. stat. solidi, 36, 1, pp. 9-48.
    • (1969) phys. stat. solidi , vol.36 , Issue.1 , pp. 9-48
    • Monch, W.1
  • 53
    • 0016519711 scopus 로고
    • A review of the theory and technology for ohmic contacts to group III-V compound semiconductors
    • Rediout, V. L. (1975). A review of the theory and technology for ohmic contacts to group III-V compound semiconductors, Sol. St. Electron., 18, 6, pp. 541-550
    • (1975) Sol. St. Electron. , vol.18 , Issue.6 , pp. 541-550
    • Rediout, V.L.1
  • 55
    • 0008355951 scopus 로고
    • Schottky diodes and ohmic contacts for III-IV semiconductors
    • Ed. by Wilmsen, C.W., Plenum, N.Y
    • Robinson, G. Y. (1983). Schottky diodes and ohmic contacts for III-IV semiconductors, in Physics and Chemistry of III-V Semiconductor Interfaces, Ed. by Wilmsen, C.W., Plenum, N.Y.
    • (1983) Physics and Chemistry of III-V Semiconductor Interfaces
    • Robinson, G.Y.1
  • 58
    • 84945627065 scopus 로고
    • Temperature dependence of avalanche breakdown voltage in p-n junctions
    • Mars, P. (1972). Temperature dependence of avalanche breakdown voltage in p-n junctions, Intern. Journ. Electron., 32, 1, pp. 23-37.
    • (1972) Intern. Journ. Electron. , vol.32 , Issue.1 , pp. 23-37
    • Mars, P.1
  • 59
    • 49949131540 scopus 로고
    • Zener and avalanche breakdown in silicon alloyed in p-n junctions
    • Singh, T. M. (1968). Zener and avalanche breakdown in silicon alloyed in p-n junctions, Sol. State Electron., 11, 1, pp. 99-115.
    • (1968) Sol. State Electron. , vol.11 , Issue.1 , pp. 99-115
    • Singh, T.M.1
  • 61
  • 65
    • 0009087899 scopus 로고
    • Space-charge-induced negative resistance in avalanche diodes
    • ED-15, 6
    • Bowers, H. C. (1968). Space-charge-induced negative resistance in avalanche diodes, IEEE Trans. Electron Devices, ED-15, 6, pp. 343-350.
    • (1968) IEEE Trans. Electron Devices , pp. 343-350
    • Bowers, H.C.1
  • 66
    • 0017555121 scopus 로고
    • Switching under impact ionization in a semiconductor
    • Kardo-Sysoev, A. F., and Chashnikov, I. G. (1977). Switching under impact ionization in a semiconductor, Sov. Phys. Semicond., 11, 11, pp. 1233-1236.
    • (1977) Sov. Phys. Semicond. , vol.11 , Issue.11 , pp. 1233-1236
    • Kardo-Sysoev, A.F.1    Chashnikov, I.G.2
  • 67
    • 33645623194 scopus 로고
    • Experimental demonstration and theory of a corrective to sec ond breakdown in Si power transistors
    • ED-13, 8
    • Stolnitz, D. (1966). Experimental demonstration and theory of a corrective to sec ond breakdown in Si power transistors, IEEE Trans. Electron Devices, ED-13, 8, pp. 643-648.
    • (1966) IEEE Trans. Electron Devices , pp. 643-648
    • Stolnitz, D.1
  • 68
    • 0000245547 scopus 로고
    • Avalanche characteristics and failure mechanism of high voltage diodes
    • ED-13, 11
    • Egava, H. (1966). Avalanche characteristics and failure mechanism of high voltage diodes, IEEE Trans. Electron Devices, ED-13, 11, pp. 754-763.
    • (1966) IEEE Trans. Electron Devices , pp. 754-763
    • Egava, H.1
  • 69
    • 0009087898 scopus 로고
    • Properties of avalanche injection and its application to fast generation and switching
    • ED-14, 3
    • Mizushima, Y., and Okamoto, Y. (1967). Properties of avalanche injection and its application to fast generation and switching, IEEE Trans. Electron Devices, ED-14, 3, pp. 146-157.
    • (1967) IEEE Trans. Electron Devices , pp. 146-157
    • Mizushima, Y.1    Okamoto, Y.2
  • 70
    • 0020726809 scopus 로고
    • Current-voltage characteristic in the breakdown region of a diode at extremely high current densities
    • Melnikova, Yu. S. (1983). Current-voltage characteristic in the breakdown region of a diode at extremely high current densities, Sov. Phys. Semicond., 17, 3, pp. 303-304.
    • (1983) Sov. Phys. Semicond. , vol.17 , Issue.3 , pp. 303-304
    • Melnikova, Y.S.1
  • 71
    • 33645615345 scopus 로고
    • Influence of the dopant profile of an n+-n-p+ structure on the current-voltage characteristic in the breakdown regime
    • Melnikova, Yu. S. (1984). Influence of the dopant profile of an n+-n-p+ structure on the current-voltage characteristic in the breakdown regime, Sov. Phys. Semicond., 18, 1, pp. 90-92.
    • (1984) Sov. Phys. Semicond. , vol.18 , Issue.1 , pp. 90-92
    • Melnikova, Y.S.1
  • 72
    • 33645611707 scopus 로고
    • Increasing of the speed of diodes
    • Shuman, V. B. (1984). Increasing of the speed of diodes, Sov. Techn. Phys. Lett., 10, 12, pp. 601-602.
    • (1984) Sov. Techn. Phys. Lett. , vol.10 , Issue.12 , pp. 601-602
    • Shuman, V.B.1
  • 73
    • 33645614969 scopus 로고
    • Homogeneous avalanche breakdown in silicon diodes
    • Zubrilov, A.S., Kotin, O. A., and Shuman, V. B. (1989). Homogeneous avalanche breakdown in silicon diodes, Sov. Phys. Semicond., 23, 4, pp. 380-382.
    • (1989) Sov. Phys. Semicond. , vol.23 , Issue.4 , pp. 380-382
    • Zubrilov, A.S.1    Kotin, O.A.2    Shuman, V.B.3
  • 74
    • 33645626748 scopus 로고
    • High-frequency oscillations of p++-n+-n-n++ avalanche diodes below transit time cutoff
    • ED-13
    • Hoefflinger, B. (1966). High-frequency oscillations of p++-n+-n-n++ avalanche diodes below transit time cutoff, IEEE Trans. Electron Devices, ED-13, pp. 151-158.
    • (1966) IEEE Trans. Electron Devices , pp. 151-158
    • Hoefflinger, B.1
  • 75
    • 84944485870 scopus 로고
    • Proposed high-frequency negative resistance diode
    • Read, W. T. (1958). Proposed high-frequency negative resistance diode, Bell Syst. Techn. Journ., 37, 2, pp. 401-446.
    • (1958) Bell Syst. Techn. Journ. , vol.37 , Issue.2 , pp. 401-446
    • Read, W.T.1
  • 77
    • 84932496837 scopus 로고
    • Negative resistance of p-n junction under avalanche breakdown conditions
    • Misawa, T. (1966). Negative resistance of p-n junction under avalanche breakdown conditions, IEEE Trans. Electron Devices, ED13, pp. 137-151.
    • (1966) IEEE Trans. Electron Devices , vol.ED13 , pp. 137-151
    • Misawa, T.1
  • 78
    • 33645615224 scopus 로고
    • IMPATT diodes, (Review)
    • ed. by R.K. Willardson and A.C. Beer, 7 (Applications and Diodes, Part B-Diodes), Academic Press
    • Misawa, T. (1971). IMPATT diodes, (Review), in Semiconductors and Semimetals, ed. by R.K. Willardson and A.C. Beer, 7 (Applications and Diodes, Part B-Diodes), Academic Press, pp. 371-472.
    • (1971) Semiconductors and Semimetals , pp. 371-472
    • Misawa, T.1
  • 80
    • 21544448810 scopus 로고
    • Current Induced by Electron Motion
    • Ramo, S. (1939). Current Induced by Electron Motion, Proc. IRE, 27, 9, pp. 584-585.
    • (1939) Proc. IRE , vol.27 , Issue.9 , pp. 584-585
    • Ramo, S.1
  • 81
    • 84941442398 scopus 로고
    • Hot Electrons in Germanium and Ohm’s Low
    • 30, 4 (part 2)
    • Shockley, W. (1951). Hot Electrons in Germanium and Ohm’s Low, Bell Syst. Techn. Journ., 30, 4 (part 2), pp. 990-1034.
    • (1951) Bell Syst. Techn. Journ. , pp. 990-1034
    • Shockley, W.1
  • 82
    • 84916389355 scopus 로고
    • Large-signal analysis of a silicon Read diode oscillator
    • ED-16, 1
    • Scharfetter, D. L., and Gummel, H. K. (1969). Large-signal analysis of a silicon Read diode oscillator, IEEE Trans. Electron Devices, ED-16, 1, pp. 64-77.
    • (1969) IEEE Trans. Electron Devices , pp. 64-77
    • Scharfetter, D.L.1    Gummel, H.K.2
  • 83
    • 5444258774 scopus 로고
    • Trends with good prospects in microwave semiconductor electron ics
    • (in Russian)
    • Tager, A. S. (1981). Trends with good prospects in microwave semiconductor electron ics, Litovskii Fizicheskii Sbornik (Lithuanian Physics Journal), 21, 4, pp. 23-44 (in Russian).
    • (1981) Litovskii Fizicheskii Sbornik (Lithuanian Physics Journal) , vol.21 , Issue.4 , pp. 23-44
    • Tager, A.S.1
  • 84
    • 0018545753 scopus 로고
    • Ballistic transport in semiconductors at low temperatures for low power high speed logic
    • ED-26, 11
    • Shur, M. S., and Eastman, L. F. (1979). Ballistic transport in semiconductors at low temperatures for low power high speed logic, IEEE Trans. Electron Devices, ED-26, 11, pp. 1677-1683.
    • (1979) IEEE Trans. Electron Devices , pp. 1677-1683
    • Shur, M.S.1    Eastman, L.F.2
  • 85
    • 0017456166 scopus 로고
    • Transient and steady-state electron transport properties of GaAs and InP
    • Maloney, T. J., and Frey, J. (1977). Transient and steady-state electron transport properties of GaAs and InP, Journ. Appl. Phys., 48, 2, pp. 781-787.
    • (1977) Journ. Appl. Phys. , vol.48 , Issue.2 , pp. 781-787
    • Maloney, T.J.1    Frey, J.2
  • 86
    • 0001366113 scopus 로고
    • Hot electron transport in semiconduc tors
    • ed. by L. Reggiany, 58, Springer-Verlag, Berlin
    • Canali, C, Nava, F., and Reggiany, L. (1985). Hot electron transport in semiconduc tors, Topics in Physics, ed. by L. Reggiany, 58, Springer-Verlag, Berlin.
    • (1985) Topics in Physics
    • Canali, C.1    Nava, F.2    Reggiany, L.3
  • 87
    • 84983860386 scopus 로고
    • High field electron diffusion in indium antimonide
    • Reklaitis, A. (1977). High field electron diffusion in indium antimonide, phys. stat. solidi (b), 83, 2, pp. K121-K124.
    • (1977) phys. stat. solidi , vol.83 , Issue.2 , pp. K121-K124
    • Reklaitis, A.1
  • 88
    • 0018006252 scopus 로고
    • Diffusion coefficient of hot electrons in GaAs
    • Pozela, J., and Reklaitis, A. (1978). Diffusion coefficient of hot electrons in GaAs, Sol. State Commun., 27, 11, pp. 1073-1077.
    • (1978) Sol. State Commun. , vol.27 , Issue.11 , pp. 1073-1077
    • Pozela, J.1    Reklaitis, A.2
  • 89
    • 0141955856 scopus 로고    scopus 로고
    • Time and real space dependence of impact ionization events in low noise impact avalanche transit time diodes
    • Lim, K. P. D., Childs, P. A., and Herbert, D. C. (2003). Time and real space dependence of impact ionization events in low noise impact avalanche transit time diodes, Journ. Appl. Phys., 94, 6, pp. 3897-3900.
    • (2003) Journ. Appl. Phys. , vol.94 , Issue.6 , pp. 3897-3900
    • Lim, K.P.D.1    Childs, P.A.2    Herbert, D.C.3
  • 90
    • 33645608741 scopus 로고
    • High electric field effects in semiconductors
    • 2, ed. by A. F. Gibson, Wiley, NY
    • Gunn, J. B. (1957). High electric field effects in semiconductors, in Progress in Semi conductors, 2, ed. by A. F. Gibson, Wiley, NY, pp. 213-247.
    • (1957) Progress in Semi conductors , pp. 213-247
    • Gunn, J.B.1
  • 92
    • 0014766404 scopus 로고
    • Avalanche injection and second breakdown in transistors
    • ED-17, 4
    • Hower, P. L., and Reddi, V. G. K. (1970). Avalanche injection and second breakdown in transistors, IEEE Trans. Electron Devices, ED-17, 4, pp. 320-335.
    • (1970) IEEE Trans. Electron Devices , pp. 320-335
    • Hower, P.L.1    Reddi, V.G.K.2
  • 93
    • 0016101863 scopus 로고
    • Negative resistance induced by avalanche injection in bulk semiconductors
    • ED-21, 9
    • Caruso, A., Spirito, P., and Vitale, G. (1974). Negative resistance induced by avalanche injection in bulk semiconductors, IEEE Trans. Electron Devices, ED-21, 9, pp. 578-586.
    • (1974) IEEE Trans. Electron Devices , pp. 578-586
    • Caruso, A.1    Spirito, P.2    Vitale, G.3
  • 94
    • 84916354522 scopus 로고
    • Current gain cutoff frequency falloff at high currents
    • ED-16, 1
    • Whittier, R. J., and Tremere, D. A. (1969). Current gain cutoff frequency falloff at high currents, IEEE Trans. Electron Devices, ED-16, 1, pp. 39-57.
    • (1969) IEEE Trans. Electron Devices , pp. 39-57
    • Whittier, R.J.1    Tremere, D.A.2
  • 95
    • 0016988329 scopus 로고
    • S-switching in semiconductor structures at high current density
    • Kardo-Sysoev, A. F., Panyutin, E. A., and Chashnikov, I. G. (1976). S-switching in semiconductor structures at high current density, Sov. Phys. Semicond., 10, 8, pp. 882-884.
    • (1976) Sov. Phys. Semicond. , vol.10 , Issue.8 , pp. 882-884
    • Kardo-Sysoev, A.F.1    Panyutin, E.A.2    Chashnikov, I.G.3
  • 96
    • 33645613686 scopus 로고
    • The static and dynamic properties of the avalanche injection diode
    • Szedon, I. R., and Jordan, A. G. (1963). The static and dynamic properties of the avalanche injection diode, Sol. St. Electron., 6, 6, pp. 631-643.
    • (1963) Sol. St. Electron. , vol.6 , Issue.6 , pp. 631-643
    • Szedon, I.R.1    Jordan, A.G.2
  • 97
  • 98
    • 33645622361 scopus 로고
    • Current Filament Formation
    • ed. by R.K. Willardson and A.C. Beer, 6, Academic Press, NY
    • Barnett, A. M. (1970). Current Filament Formation, in Semiconductors and Semimet-als, ed. by R.K. Willardson and A.C. Beer, 6, Academic Press, NY, pp. 2-172.
    • (1970) Semiconductors and Semimet-als , pp. 2-172
    • Barnett, A.M.1
  • 100
    • 0038273858 scopus 로고    scopus 로고
    • Avalanche transis tor operation at extreme currents: Physical reasons for low residual voltages
    • Vainshtein, S. N., Yuferev, V. S., and Kostamovaara, J. T. (2003). Avalanche transis tor operation at extreme currents: physical reasons for low residual voltages, Solid State Electron., 47, 8, pp. 1255-1263.
    • (2003) Solid State Electron. , vol.47 , Issue.8 , pp. 1255-1263
    • Vainshtein, S.N.1    Yuferev, V.S.2    Kostamovaara, J.T.3
  • 101
    • 0014318424 scopus 로고
    • The forward characteristic of silicon power rectifiers at high current densities
    • Herlet, A., and Raithel, R. (1968). The forward characteristic of silicon power rectifiers at high current densities, Solid State Electron., 11, 8, pp. 717-742.
    • (1968) Solid State Electron. , vol.11 , Issue.8 , pp. 717-742
    • Herlet, A.1    Raithel, R.2
  • 102
    • 0029220834 scopus 로고
    • Investigation of the effect of electron-hole scattering on charge carrier transport in semiconductors and semiconductor devices under low injection conditions
    • Mnatsakanov, T. T., Gresserov, B. N., Pomortseva, L. I. (1995). Investigation of the effect of electron-hole scattering on charge carrier transport in semiconductors and semiconductor devices under low injection conditions, Solid State. Electron., 38, 1, pp. 225-233.
    • (1995) Solid State. Electron. , vol.38 , Issue.1 , pp. 225-233
    • Mnatsakanov, T.T.1    Gresserov, B.N.2    Pomortseva, L.I.3
  • 103
    • 0036538991 scopus 로고    scopus 로고
    • On the transport equations in popular commercial device simulators
    • ED-49, 4
    • Levinshtein, M. E., Mnatsakanov, T. T. (2002). On the transport equations in popular commercial device simulators, IEEE Trans. Electron Devices, ED-49, 4, pp. 702-703.
    • (2002) IEEE Trans. Electron Devices , pp. 702-703
    • Levinshtein, M.E.1    Mnatsakanov, T.T.2
  • 104
    • 0022813633 scopus 로고
    • Heavy doping effects in silicon
    • Overstraeten, R., Mertenes, R. (1987). Heavy doping effects in silicon, Solid State. Electron., 30, 11, pp. 1077-1087.
    • (1987) Solid State. Electron. , vol.30 , Issue.11 , pp. 1077-1087
    • Overstraeten, R.1    Mertenes, R.2
  • 105
    • 0001379392 scopus 로고    scopus 로고
    • Doping-induced effects on the band structure in n-type 3C-, 2H-, 4H-, 6H-SiC, and Si
    • Persson, C, Lindefelt, U., Sernelius, B. E. (1999-2011). Doping-induced effects on the band structure in n-type 3C-, 2H-, 4H-, 6H-SiC, and Si, Phys. Rev., B60, 24, pp. 16479-161493.
    • (1999) Phys. Rev. , vol.B60 , Issue.24 , pp. 16479-161493
    • Persson, C.1    Lindefelt, U.2    Sernelius, B.E.3
  • 106
    • 0020140616 scopus 로고
    • Investigation of the Auger recombination process in multilayer silicon structures at high current densities
    • Kuz’min, V. A., Mnatsakanov, T. T., Pomortseva, L. I., Shuman, V. B. (1982). Investigation of the Auger recombination process in multilayer silicon structures at high current densities, Sov. Phys. Semicond., 16, 6, pp. 835-838.
    • (1982) Sov. Phys. Semicond. , vol.16 , Issue.6 , pp. 835-838
    • Kuz’min, V.A.1    Mnatsakanov, T.T.2    Pomortseva, L.I.3    Shuman, V.B.4
  • 107
    • 0342579871 scopus 로고
    • Second breakdown in the forward and reverse base current region
    • Nienhius, R. N. (1966). Second breakdown in the forward and reverse base current region, IEEE Trans. Electron Devices, ED13, pp. 655-652.
    • (1966) IEEE Trans. Electron Devices , vol.ED13 , pp. 655-652
    • Nienhius, R.N.1
  • 108
    • 0003277507 scopus 로고
    • Current mode second breakdown in epitaxial planar transistors
    • ED-13, 11
    • Grutchfield, H. B., and Moutoux, T. J. (1966). Current mode second breakdown in epitaxial planar transistors, IEEE Trans. Electron Devices, ED-13, 11, pp. 743-748.
    • (1966) IEEE Trans. Electron Devices , pp. 743-748
    • Grutchfield, H.B.1    Moutoux, T.J.2
  • 109
    • 0016541859 scopus 로고
    • Reverse-biased p+-n-n+ junction at extreme currents
    • Neudeck, G. W. (1975). Reverse-biased p+-n-n+ junction at extreme currents, Elec tron. Lett, 11, 17, pp. 397-398.
    • (1975) Elec tron. Lett , vol.11 , Issue.17 , pp. 397-398
    • Neudeck, G.W.1
  • 110
    • 0016652448 scopus 로고
    • Effect of injected current on current-mode second breakdown in silicon p+-n-n+ structure
    • Hane, K., and Suzuki, T. (1975). Effect of injected current on current-mode second breakdown in silicon p+-n-n+ structure, Jpn. Journ. Appl. Phys., 14, 12, pp. 1961-1968.
    • (1975) Jpn. Journ. Appl. Phys. , vol.14 , Issue.12 , pp. 1961-1968
    • Hane, K.1    Suzuki, T.2
  • 111
    • 0036247891 scopus 로고    scopus 로고
    • Properties of the Transient of Avalanche Transistor Switching at Extreme Current Densities
    • ED-49, 1
    • Vainshtein, S. N., Yuferev, V. S., and Kostamovaara, J. T. (2002). Properties of the Transient of Avalanche Transistor Switching at Extreme Current Densities, IEEE Trans. Electron Devices, ED-49, 1, pp. 142-149.
    • (2002) IEEE Trans. Electron Devices , pp. 142-149
    • Vainshtein, S.N.1    Yuferev, V.S.2    Kostamovaara, J.T.3
  • 112
    • 0041910804 scopus 로고    scopus 로고
    • Nondestructive cur rent localization upon high-current nanosecond switching of an avalanche transistor
    • ED-50, 9
    • Vainshtein, S. N., Yuferev, V. S., and Kostamovaara, J. T. (2003). Nondestructive cur rent localization upon high-current nanosecond switching of an avalanche transistor, IEEE Trans. Electron Devices, ED-50, 9, pp. 1988-1990.
    • (2003) IEEE Trans. Electron Devices , pp. 1988-1990
    • Vainshtein, S.N.1    Yuferev, V.S.2    Kostamovaara, J.T.3
  • 113
    • 0009051938 scopus 로고    scopus 로고
    • The theory of operation of transistorized Marx bank circuit
    • Malik, K. (1999). The theory of operation of transistorized Marx bank circuit, Rev. Sci. Instrument, 70, 4, pp. 2155-2160.
    • (1999) Rev. Sci. Instrument , vol.70 , Issue.4 , pp. 2155-2160
    • Malik, K.1
  • 114
    • 84937658108 scopus 로고
    • A theory of transistor cutoff frequency (ft) falloff at high current densities
    • ED-9, 2
    • Kirk, C. T. (1962). A theory of transistor cutoff frequency (ft) falloff at high current densities. IRE Trans. Electron. Devices, ED-9, 2, pp. 164-174.
    • (1962) IRE Trans. Electron. Devices , pp. 164-174
    • Kirk, C.T.1
  • 115
    • 0000519355 scopus 로고
    • Some aspects of the design of power transistors
    • Fletcher, F. H. (1955). Some aspects of the design of power transistors, Proc. IRE, 43, 5, pp. 551-559.
    • (1955) Proc. IRE , vol.43 , Issue.5 , pp. 551-559
    • Fletcher, F.H.1
  • 116
    • 0001083140 scopus 로고
    • The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometries
    • ED-11, 5
    • Hauser, J. R. (1964). The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometries, IEEE Trans. Electron Devices, ED-11, 5, pp. 238-243.
    • (1964) IEEE Trans. Electron Devices , pp. 238-243
    • Hauser, J.R.1
  • 117
    • 0022755806 scopus 로고
    • Second breakdown pre diction by two-dimensional numerical analysis of BJT turnoff
    • ED-33, 7
    • Hwang, K., Navon, D. H., Tang, T. W., Hower, P. L. (1986). Second breakdown pre diction by two-dimensional numerical analysis of BJT turnoff, IEEE Trans. Electron Devices, ED-33, 7, pp. 1067-1071.
    • (1986) IEEE Trans. Electron Devices , pp. 1067-1071
    • Hwang, K.1    Navon, D.H.2    Tang, T.W.3    Hower, P.L.4
  • 119
    • 3543140617 scopus 로고    scopus 로고
    • Picosecond range switching of GaAs avalanche transistor due to bulk carrier generation by avalanching Gunn domains
    • Vainshtein, S. N., Yuferev, V. S., and Kostamovaara, J. T. (2004). Picosecond range switching of GaAs avalanche transistor due to bulk carrier generation by avalanching Gunn domains, Proc. of SPIE, 5352, pp. 382-393.
    • (2004) Proc. of SPIE , vol.5352 , pp. 382-393
    • Vainshtein, S.N.1    Yuferev, V.S.2    Kostamovaara, J.T.3
  • 120
    • 0003159849 scopus 로고
    • Microwave oscillations of current in III-V semiconductors
    • Gunn, J. B. (1963).Microwave oscillations of current in III-V semiconductors, Solid State Commun., 1, 4, pp. 88-91.
    • (1963) Solid State Commun. , vol.1 , Issue.4 , pp. 88-91
    • Gunn, J.B.1
  • 121
    • 0000754493 scopus 로고
    • Instabilities of current in III-V semiconductors
    • Gunn, J. B. (1964). Instabilities of current in III-V semiconductors, IBM Journ, Res. Dev., 8, 2, pp. 141-159.
    • (1964) IBM Journ, Res. Dev. , vol.8 , Issue.2 , pp. 141-159
    • Gunn, J.B.1
  • 122
    • 33645618344 scopus 로고
    • Contribution to the experimental study of the Gunn effect in the long samples
    • ED-14, 9
    • Guetin, P. (1967). Contribution to the experimental study of the Gunn effect in the long samples, IEEE Trans. Electron Devices, ED-14, 9, pp. 552-562.
    • (1967) IEEE Trans. Electron Devices , pp. 552-562
    • Guetin, P.1
  • 123
    • 0346685539 scopus 로고
    • Theory of the Gunn effect
    • Kroemer, H. (1964). Theory of the Gunn effect, Proc. IRE., 52, 12, p. 1736.
    • (1964) Proc. IRE. , vol.52 , Issue.12 , pp. 1736
    • Kroemer, H.1
  • 127
    • 0017465086 scopus 로고
    • Electron drift velocity in n-GaAs at high electric fields
    • Houston, P. A., Evans, G. R. (1977). Electron drift velocity in n-GaAs at high electric fields, Solid State. Electron., 20, 3, pp. 197-204.
    • (1977) Solid State. Electron. , vol.20 , Issue.3 , pp. 197-204
    • Houston, P.A.1    Evans, G.R.2
  • 128
    • 0000039612 scopus 로고
    • Transport properties of GaAs
    • Ruch, J. G., Kino, G. S. (1969). Transport properties of GaAs, Phys. Rev., 174, 3, pp. 921-931.
    • (1969) Phys. Rev. , vol.174 , Issue.3 , pp. 921-931
    • Ruch, J.G.1    Kino, G.S.2
  • 129
    • 0007140484 scopus 로고
    • Computer study of bulk GaAs devices with random and dimen sional doping fluctuations
    • Thim, H. W. (1968). Computer study of bulk GaAs devices with random and dimen sional doping fluctuations, Journ. Appl. Phys., 39, 8, pp. 3897-3904.
    • (1968) Journ. Appl. Phys. , vol.39 , Issue.8 , pp. 3897-3904
    • Thim, H.W.1
  • 130
    • 21244457193 scopus 로고
    • A simple analysis of stable domain propagation in the Gunn effect
    • Butcher, P. N., Fawcett, W., Hilsum, C. (1966). A simple analysis of stable domain propagation in the Gunn effect, Brit. Journ. Appl. Phys., 17, 7, pp. 841-850.
    • (1966) Brit. Journ. Appl. Phys. , vol.17 , Issue.7 , pp. 841-850
    • Butcher, P.N.1    Fawcett, W.2    Hilsum, C.3
  • 131
    • 0018259871 scopus 로고
    • Maximum electric field in high filed domain
    • Shur, M. S. (1978). Maximum electric field in high filed domain, Electron. Lett., 14, 16, pp. 521-522.
    • (1978) Electron. Lett. , vol.14 , Issue.16 , pp. 521-522
    • Shur, M.S.1
  • 132
    • 0015994988 scopus 로고
    • Computer simulation of transferred electron devices using the displacement maxwellian approach
    • ED-21, 1
    • Bosh, R., Thim, H. W. (1974). Computer simulation of transferred electron devices using the displacement maxwellian approach, IEEE Trans. Electron Devices, ED-21, 1, pp. 16-25.
    • (1974) IEEE Trans. Electron Devices , pp. 16-25
    • Bosh, R.1    Thim, H.W.2
  • 133
    • 0042293734 scopus 로고
    • Some properties of the moving high-field domain in Gunn effect devices
    • ED-13, 1
    • Heeks, J. (1966). Some properties of the moving high-field domain in Gunn effect devices, IEEE Trans. Electron Devices, ED-13, 1, pp. 68-70.
    • (1966) IEEE Trans. Electron Devices , pp. 68-70
    • Heeks, J.1
  • 135
    • 33645631664 scopus 로고
    • Current filamentation in high doped Gunn diodes
    • Gelmont, B. L., Shur, M. S. (1970). Current filamentation in high doped Gunn diodes, JETP Letters, 11, 7, pp. 350-353.
    • (1970) JETP Letters , vol.11 , Issue.7 , pp. 350-353
    • Gelmont, B.L.1    Shur, M.S.2
  • 136
    • 36849104630 scopus 로고
    • Recombination processes following impact ionization by high-field domains in gallium arsenide
    • Southgate, P. D. (1967). Recombination processes following impact ionization by high-field domains in gallium arsenide, Journ. Appl. Phys., 38, 12, pp. 4589-4595.
    • (1967) Journ. Appl. Phys. , vol.38 , Issue.12 , pp. 4589-4595
    • Southgate, P.D.1
  • 137
    • 0015161154 scopus 로고
    • Experimental studies of Gunn domains and avalanching
    • Owens, J., Kino, G. S. (1971). Experimental studies of Gunn domains and avalanching, Journ. Appl. Phys., 42, 12, pp. 5019-5028.
    • (1971) Journ. Appl. Phys. , vol.42 , Issue.12 , pp. 5019-5028
    • Owens, J.1    Kino, G.S.2
  • 138
    • 0015661908 scopus 로고
    • S-type current-voltage characteristic in Gunn diodes with deep levels. Comparison of theory and experiment
    • Gelmont, B. L., Shur, M. S. (1973). S-type current-voltage characteristic in Gunn diodes with deep levels. Comparison of theory and experiment, Sov. Phys. Semicond., 7, 3, pp. 377-379.
    • (1973) Sov. Phys. Semicond. , vol.7 , Issue.3 , pp. 377-379
    • Gelmont, B.L.1    Shur, M.S.2
  • 139
    • 0015628582 scopus 로고
    • S-type current-voltage characteristics in Gunn diodes
    • Gelmont, B. L., Shur, M. S. (1973). S-type current-voltage characteristics in Gunn diodes, Journ. Phys. D (Appl Phys), 6, 7, pp. 842-850.
    • (1973) Journ. Phys. D (Appl Phys) , vol.6 , Issue.7 , pp. 842-850
    • Gelmont, B.L.1    Shur, M.S.2
  • 140
    • 24144498702 scopus 로고
    • Stimulated emission from bulk field-ionized GaAs
    • QE-4, 4
    • Southgate, P. D. (1968). Stimulated emission from bulk field-ionized GaAs, IEEE Journ. Quantum Electron, QE-4, 4, pp. 179-185.
    • (1968) IEEE Journ. Quantum Electron , pp. 179-185
    • Southgate, P.D.1
  • 141
    • 33645610698 scopus 로고
    • Stimulated emission in field-ionized bulk InP
    • 28A, 3
    • Southgate, P. D., Mazzochi, R. T. (1968). Stimulated emission in field-ionized bulk InP, Phys. Lett, 28A, 3, pp. 216-217.
    • (1968) Phys. Lett , pp. 216-217
    • Southgate, P.D.1    Mazzochi, R.T.2
  • 142
    • 0015670739 scopus 로고
    • Stimulated emission from Gunn diodes
    • Sudzilovskii, V. Yu. (1973). Stimulated emission from Gunn diodes, Sov. Phys. Semi cond., 7, 4, pp. 462-464.
    • (1973) Sov. Phys. Semi cond. , vol.7 , Issue.4 , pp. 462-464
    • Sudzilovskii, V.Y.1
  • 143
    • 0015661908 scopus 로고
    • S-type current-voltage characteristic and recom bination emission in Gunn diodes
    • Gelmont, B. L., Shur, M. S. (1973). S-type current-voltage characteristic and recom bination emission in Gunn diodes, Electron. Lett., 7, 3, pp. 377-379.
    • (1973) Electron. Lett. , vol.7 , Issue.3 , pp. 377-379
    • Gelmont, B.L.1    Shur, M.S.2
  • 144
    • 24144435330 scopus 로고
    • Laser action in field-ionized bulk GaAs
    • Southgate, P. D. (1968). Laser action in field-ionized bulk GaAs, Appl. Phys. Lett, 12, 3, pp. 61-63.
    • (1968) Appl. Phys. Lett , vol.12 , Issue.3 , pp. 61-63
    • Southgate, P.D.1
  • 146
    • 36449006285 scopus 로고
    • Transferred-electron induced current in stabilities in heterojunction bipolar transistors
    • Posse, V. A., Jalali, B., Levi, A.F. (1995). Transferred-electron induced current in stabilities in heterojunction bipolar transistors, Appl. Phys. Lett., 66, 24, pp. 3319-3321.
    • (1995) Appl. Phys. Lett. , vol.66 , Issue.24 , pp. 3319-3321
    • Posse, V.A.1    Jalali, B.2    Levi, A.F.3
  • 147
    • 24144477909 scopus 로고
    • Observations of multiple high field domains in n-GaAs
    • Thim, H., Barver, M. R. (1968). Observations of multiple high field domains in n-GaAs, Proc. IEEE, 56, 1, pp. 110-111.
    • (1968) Proc. IEEE , vol.56 , Issue.1 , pp. 110-111
    • Thim, H.1    Barver, M.R.2
  • 148
    • 33645621549 scopus 로고
    • Nucleation of high-field domains in n-GaAs
    • Ohtomo, M. (1968). Nucleation of high-field domains in n-GaAs, Jpn. Journ. Appl. Phys., 7, 11, pp. 1368-1380.
    • (1968) Jpn. Journ. Appl. Phys. , vol.7 , Issue.11 , pp. 1368-1380
    • Ohtomo, M.1
  • 149
    • 0007140484 scopus 로고
    • Computer study of bulk GaAs devices with random and dimensional doping fluctuations
    • Thim, H. (1968). Computer study of bulk GaAs devices with random and dimensional doping fluctuations, Journ. Appl. Phys., 39, 8, pp. 3897-3904.
    • (1968) Journ. Appl. Phys. , vol.39 , Issue.8 , pp. 3897-3904
    • Thim, H.1
  • 150
    • 33645625034 scopus 로고
    • High filed domains in Gunn diodes with two kinds of carriers
    • Gelmont, B. L., Shur, M. S. (1971). High filed domains in Gunn diodes with two kinds of carriers, Sov. Phys. JETP, 33, 6, pp. 1234-1239.
    • (1971) Sov. Phys. JETP , vol.33 , Issue.6 , pp. 1234-1239
    • Gelmont, B.L.1    Shur, M.S.2
  • 151
    • 13244296183 scopus 로고
    • High filed Gunn domains in the presence of electron-hole pairs
    • 36A, 4
    • Gelmont, B. L., Shur, M. S. (1971). High filed Gunn domains in the presence of electron-hole pairs, Phys. Lett., 36A, 4, pp. 305-306.
    • (1971) Phys. Lett. , pp. 305-306
    • Gelmont, B.L.1    Shur, M.S.2
  • 152
    • 0020191837 scopus 로고
    • Theory of an anode domain in a Gunn diode
    • Dyakonov, M. I., Furman, A. S. (1982). Theory of an anode domain in a Gunn diode, Sov. Phys. Semicond., 16, 10, pp. 1138-1143.
    • (1982) Sov. Phys. Semicond. , vol.16 , Issue.10 , pp. 1138-1143
    • Dyakonov, M.I.1    Furman, A.S.2
  • 153
    • 24144448569 scopus 로고
    • Anode domain transient processes in supercritical Gunn diodes
    • Kireev, O. A., Levisnhtein, M. E., Rumyantsev, S. L. (1984). Anode domain transient processes in supercritical Gunn diodes, Solid State. Electron., 27, 3, pp. 233-239.
    • (1984) Solid State. Electron. , vol.27 , Issue.3 , pp. 233-239
    • Kireev, O.A.1    Levisnhtein, M.E.2    Rumyantsev, S.L.3
  • 154
    • 33645614181 scopus 로고
    • High-efficiency oscillations in geranium avalanche diodes below the transit-time frequency
    • Johnston, R. L., Scharfetter, D. L., Baterlink, D. J. (1968). High-efficiency oscillations in geranium avalanche diodes below the transit-time frequency, Proc. IEEE, 56, 9, pp. 1611-1613.
    • (1968) Proc. IEEE , vol.56 , Issue.9 , pp. 1611-1613
    • Johnston, R.L.1    Scharfetter, D.L.2    Baterlink, D.J.3
  • 155
    • 84938158796 scopus 로고
    • High power, high efficiency silicon avalanche diodes at ultrahigh frequencies
    • Prager, H. J., Chang, K. K. N., and Weisbroad, S. (1967). High power, high efficiency silicon avalanche diodes at ultrahigh frequencies, Proc. IEEE, 55, 4, pp. 586-587.
    • (1967) Proc. IEEE , vol.55 , Issue.4 , pp. 586-587
    • Prager, H.J.1    Chang, K.K.N.2    Weisbroad, S.3
  • 156
    • 33645627789 scopus 로고
    • High-efficiency CW Impatt operation
    • Iglesias, D. E., Evans, W. J. (1968). High-efficiency CW Impatt operation, Proc. IEEE, 56, 9, p. 1610.
    • (1968) Proc. IEEE , vol.56 , Issue.9 , pp. 1610
    • Iglesias, D.E.1    Evans, W.J.2
  • 157
    • 0014564398 scopus 로고
    • A theory for the high-efficiency mode of oscillation in avalanche diodes
    • Clorfine, A. S., Ikola, R. J., Napoli, L. S. (1969). A theory for the high-efficiency mode of oscillation in avalanche diodes, RCA Review, 30, 3, pp. 397-421.
    • (1969) RCA Review , vol.30 , Issue.3 , pp. 397-421
    • Clorfine, A.S.1    Ikola, R.J.2    Napoli, L.S.3
  • 159
    • 0013393296 scopus 로고
    • Subnanosecond current drop in delayed breakdown of silicon p-n junctions
    • Grekhov, I. V., Kardo-Sysoev, A. F. (1979). Subnanosecond current drop in delayed breakdown of silicon p-n junctions, Sov. Tech. Phys. Lett., 5, 8, pp. 395-396.
    • (1979) Sov. Tech. Phys. Lett. , vol.5 , Issue.8 , pp. 395-396
    • Grekhov, I.V.1    Kardo-Sysoev, A.F.2
  • 160
    • 70349550561 scopus 로고    scopus 로고
    • New Power Semiconductor Devices for Generation of Nano-and Subnanosecond Pulses
    • ed. by J. D. Taylor, CRC Press
    • Kardo-Sysoev, A. F. (2000). New Power Semiconductor Devices for Generation of Nano-and Subnanosecond Pulses, in Ultra-Wideband Radar Technology, ed. by J. D. Taylor, CRC Press, pp. 205-290.
    • (2000) Ultra-Wideband Radar Technology , pp. 205-290
    • Kardo-Sysoev, A.F.1
  • 161
    • 0041035656 scopus 로고
    • Computer model study of the process of switching of a reverse-biased p-n junction to high conductivity state
    • Bilenko, Yu. D., Levinshtein, M. E., Popova, M. V., Yuferev, V. S. (1983). Computer model study of the process of switching of a reverse-biased p-n junction to high conductivity state, Sov. Phys. Semicond., 17, 10, pp. 1153-1156.
    • (1983) Sov. Phys. Semicond. , vol.17 , Issue.10 , pp. 1153-1156
    • Bilenko, Y.D.1    Levinshtein, M.E.2    Popova, M.V.3    Yuferev, V.S.4
  • 164
    • 0037103582 scopus 로고    scopus 로고
    • Superfast fronts of impact ionization in initially unbiased layered semiconductor structures
    • Rodin, P., Ebert, U., Hundsdorfer, W., Grekhov, I. V. (2002). Superfast fronts of impact ionization in initially unbiased layered semiconductor structures, Journ. Appl Phys, 92, 4, pp. 1971-1980.
    • (2002) Journ. Appl Phys , vol.92 , Issue.4 , pp. 1971-1980
    • Rodin, P.1    Ebert, U.2    Hundsdorfer, W.3    Grekhov, I.V.4
  • 166
    • 0000481566 scopus 로고
    • Theory of streamer discharge in semi conductors
    • Dyakonov, M. I., Kachorovskii, V. Yu. (1988). Theory of streamer discharge in semi conductors Sov. Phys. JETP, 67, 5, pp. 1049-1054.
    • (1988) Sov. Phys. JETP , vol.67 , Issue.5 , pp. 1049-1054
    • Dyakonov, M.I.1    Kachorovskii, V.Y.2
  • 168
    • 21344482469 scopus 로고
    • Long-wavelength transverse instability of shock-ionization waves in diode structures
    • Minarskii, A. M., and Rodin, P. B. (1994). Long-wavelength transverse instability of shock-ionization waves in diode structures, Techn. Phys. Lett., 20, 6, pp. 490-491.
    • (1994) Techn. Phys. Lett. , vol.20 , Issue.6 , pp. 490-491
    • Minarskii, A.M.1    Rodin, P.B.2
  • 169
    • 0040513138 scopus 로고    scopus 로고
    • Transverse stability of an impact-ionization front in a Si p+-n-n+ structure
    • Minarskii, A. M., and Rodin, P. B. (1997). Transverse stability of an impact-ionization front in a Si p+-n-n+ structure, Semiconductors, 31, 4, pp. 366-370.
    • (1997) Semiconductors , vol.31 , Issue.4 , pp. 366-370
    • Minarskii, A.M.1    Rodin, P.B.2
  • 170
    • 0031169657 scopus 로고    scopus 로고
    • Transverse instability and inhomogeneous dynamics of superfast impact ionization waves in diode structures
    • Minarskii, A. M., and Rodin, P. B. (1997). Transverse instability and inhomogeneous dynamics of superfast impact ionization waves in diode structures, Solid State. Electron., 41, 5, pp. 813-823.
    • (1997) Solid State. Electron. , vol.41 , Issue.5 , pp. 813-823
    • Minarskii, A.M.1    Rodin, P.B.2
  • 171
    • 0043228517 scopus 로고
    • Vizualization of sub-nanosecond switching of gallium arsenide diode structures
    • Vainshtein, S. N., Zhilyaev, Yu. V., Levinshtein, M. E. (1989). Vizualization of sub-nanosecond switching of gallium arsenide diode structures, Sov. Tech. Phys. Lett., 14, 8, pp. 664-665.
    • (1989) Sov. Tech. Phys. Lett. , vol.14 , Issue.8 , pp. 664-665
    • Vainshtein, S.N.1    Zhilyaev, Y.V.2    Levinshtein, M.E.3
  • 172
    • 0037100970 scopus 로고    scopus 로고
    • Tunneling-assisted impact ionization front in semiconductors
    • Rodin, P., Ebert, U., Hundsdorfer, W., Grekhov, I. V. (2002). Tunneling-assisted impact ionization front in semiconductors, Journ. Appl Phys., 92, 2, pp. 958-964.
    • (2002) Journ. Appl Phys. , vol.92 , Issue.2 , pp. 958-964
    • Rodin, P.1    Ebert, U.2    Hundsdorfer, W.3    Grekhov, I.V.4
  • 174
    • 85115726613 scopus 로고    scopus 로고
    • http://www.fidtechnology.com/Products/fastpowergens.htm
  • 176
    • 0041678306 scopus 로고
    • Possibility of a rapid production of a dense large-volume electron-hole plasma in gallium arsenide
    • Grekhov, I. V., Efanov, V. M. (1988). Possibility of a rapid production of a dense large-volume electron-hole plasma in gallium arsenide, Sov. Tech. Phys. Lett., 14, 12, pp. 920-921.
    • (1988) Sov. Tech. Phys. Lett. , vol.14 , Issue.12 , pp. 920-921
    • Grekhov, I.V.1    Efanov, V.M.2
  • 177
    • 0042727289 scopus 로고
    • Possible generation of simulated emission using collisional ionization waves in semicondutors
    • Grekhov, I. V., Efanov, V. M. (1990). Possible generation of simulated emission using collisional ionization waves in semicondutors, Sov. Tech. Phys. Lett., 16, 9, pp. 645-647.
    • (1990) Sov. Tech. Phys. Lett. , vol.16 , Issue.9 , pp. 645-647
    • Grekhov, I.V.1    Efanov, V.M.2
  • 178
    • 0024031654 scopus 로고
    • Forward current-voltage characteristics of gallium arsenide power diodes at high current densities
    • Delimova, L. A., Zhilyaev, Yu. V., Kachorovsky, V. Yu., Levinshtein, M. E., and Rossin, V. V. (1988). Forward current-voltage characteristics of gallium arsenide power diodes at high current densities, Solid State. Electron., 31, 6, pp. 1101-1104.
    • (1988) Solid State. Electron. , vol.31 , Issue.6 , pp. 1101-1104
    • Delimova, L.A.1    Zhilyaev, Y.V.2    Kachorovsky, V.Y.3    Levinshtein, M.E.4    Rossin, V.V.5
  • 179
    • 0005359338 scopus 로고
    • The gate-triggered turn-on process in thyristors
    • Bergman, G. D. (1965). The gate-triggered turn-on process in thyristors, Solid State Electronics, 8, 9, pp. 757-765.
    • (1965) Solid State Electronics , vol.8 , Issue.9 , pp. 757-765
    • Bergman, G.D.1
  • 180
    • 0003914255 scopus 로고
    • Springer Verlag, New York-Heidelberg-Berlin
    • Blicher, A. (1976). Thyristor physics, Springer Verlag, New York-Heidelberg-Berlin.
    • (1976) Thyristor physics
    • Blicher, A.1
  • 181
    • 0004140254 scopus 로고
    • Springer-Verlag, Heidelberg
    • Gerlach, W. (1981). Thyristoren, Springer-Verlag, Heidelberg.
    • (1981) Thyristoren
    • Gerlach, W.1
  • 182
    • 33645632533 scopus 로고
    • On the maximum turn-on speed of p-n-p-n structures
    • (in Russian)
    • Kuzmin, V. A., Pavlik, V. Ya., Shuman, V. B. (1980). On the maximum turn-on speed of p-n-p-n structures, Radiotechnika i Electronika, 26, p. 1270 (in Russian).
    • (1980) Radiotechnika i Electronika , vol.26 , pp. 1270
    • Kuzmin, V.A.1    Pavlik, V.Y.2    Shuman, V.B.3
  • 183
    • 0021300103 scopus 로고
    • Dynamic localization of the current during turn-on transient in thyristors
    • Brylevskii, V. I., Levinshtein, M. E., Chashnikov, I. G. (1984). Dynamic localization of the current during turn-on transient in thyristors, Sov. Phys. Tech. Phys., 29, pp. 69-70.
    • (1984) Sov. Phys. Tech. Phys. , vol.29 , pp. 69-70
    • Brylevskii, V.I.1    Levinshtein, M.E.2    Chashnikov, I.G.3
  • 184
    • 5244246459 scopus 로고
    • Comparative study of the turn-on of gallium arsenide and silicon thyristors
    • Vainshtein, S. N., Zhilyaev, Yu. V., and Levinshtein, M. E. (1986). Comparative study of the turn-on of gallium arsenide and silicon thyristors, Sov. Phys. Techn. Phys., 31, 7, pp. 788-790.
    • (1986) Sov. Phys. Techn. Phys. , vol.31 , Issue.7 , pp. 788-790
    • Vainshtein, S.N.1    Zhilyaev, Y.V.2    Levinshtein, M.E.3
  • 185
    • 33645630849 scopus 로고
    • Rate of propagation of the “on” state in a thyristor at high current density
    • Levinshtein, M. E., Shenderei, S.V. (1979). Rate of propagation of the “on” state in a thyristor at high current density, Sov. Phys. Semicond, 13, pp. 593-595.
    • (1979) Sov. Phys. Semicond , vol.13 , pp. 593-595
    • Levinshtein, M.E.1    Shenderei, S.V.2
  • 187
    • 0042727267 scopus 로고
    • Investigation of sub nanosecod switching of gallium arsenide thyristor structures
    • Vainshtein, S. N., Zhilyaev, Yu. V., Levinshtein, M. E. (1988). Investigation of sub nanosecod switching of gallium arsenide thyristor structures, Sov. Phys. Semicond, 22, 6, pp. 717-718.
    • (1988) Sov. Phys. Semicond , vol.22 , Issue.6 , pp. 717-718
    • Vainshtein, S.N.1    Zhilyaev, Y.V.2    Levinshtein, M.E.3
  • 193
    • 0001088921 scopus 로고
    • Ionizing waves of potential gradient
    • Loeb, L. B. (1965). Ionizing waves of potential gradient, Science, 148, 3676, pp. 1417-1426.
    • (1965) Science , vol.148 , Issue.3676 , pp. 1417-1426
    • Loeb, L.B.1
  • 195
    • 0042226331 scopus 로고
    • Streamer discharge in a homogeneous electric field
    • Dyakonov, M. I., Kachorovskii, V. Yu. (1989). Streamer discharge in a homogeneous electric field, Sou. Phys. JETP, 68, 5, pp. 1070-1074.
    • (1989) Sou. Phys. JETP , vol.68 , Issue.5 , pp. 1070-1074
    • Dyakonov, M.I.1    Kachorovskii, V.Y.2
  • 196
    • 33645613179 scopus 로고
    • Velocity of streamer propagating from a point during linear voltage increase
    • Dyakonov, M. I., Kachorovskii, V. Yu. (1990). Velocity of streamer propagating from a point during linear voltage increase, Sov. Techn. Phys. Lett, 16, 1, pp. 32-33.
    • (1990) Sov. Techn. Phys. Lett , vol.16 , Issue.1 , pp. 32-33
    • Dyakonov, M.I.1    Kachorovskii, V.Y.2
  • 198
    • 4043123702 scopus 로고
    • Numerical simula tion of a streamer discharge in a uniform field, Sot;
    • Evlakhov, N. V., Kachorovskii, V. Yu., Chistyakov, V. M. (1992). Numerical simula tion of a streamer discharge in a uniform field, Sot;. Phys. JETP, 75, 1, pp. 31-36.
    • (1992) Phys. JETP , vol.75 , Issue.1 , pp. 31-36
    • Evlakhov, N.V.1    Kachorovskii, V.Y.2    Chistyakov, V.M.3
  • 199
    • 36549103808 scopus 로고
    • Two-dimensional studies of streamers in gases
    • Dhali, S. K., Williams, P. F. (1987). Two-dimensional studies of streamers in gases, Journ. Appl Phys., 62, 12, pp. 4696-4707.
    • (1987) Journ. Appl Phys. , vol.62 , Issue.12 , pp. 4696-4707
    • Dhali, S.K.1    Williams, P.F.2
  • 200
    • 85115700666 scopus 로고    scopus 로고
    • Ed. by K. D. Tsendin, Nauka, St. Petersburg (Chapter 6: E. A. Lebedev and K. D. Tsendin, Switching effect in chalcogenide glassy semiconductors) (in Russian)
    • Electron phenomena in chalcogenide glassy semiconductors, (1996). Ed. by K. D. Tsendin, Nauka, St. Petersburg (Chapter 6: E. A. Lebedev and K. D. Tsendin, Switching effect in chalcogenide glassy semiconductors) (in Russian).
    • (1996) Electron phenomena in chalcogenide glassy semiconductors
  • 201
    • 33645662563 scopus 로고
    • Zur Warmetheorie des elektrischen Durchschlages
    • Fock, V. A.(1927). Zur Warmetheorie des elektrischen Durchschlages, Archiv fur Elek trotechnik, 19, 1, pp. 71-81.
    • (1927) Archiv fur Elek trotechnik , vol.19 , Issue.1 , pp. 71-81
    • Fock, V.A.1
  • 204
    • 35949040018 scopus 로고
    • The mechanism of threshold switching in amorphous alloys
    • Adler, D., Henisch, H. K., Mott, N. (1978). The mechanism of threshold switching in amorphous alloys, Rev. Mod. Phys., 50, 2, pp. 209-220.
    • (1978) Rev. Mod. Phys. , vol.50 , Issue.2 , pp. 209-220
    • Adler, D.1    Henisch, H.K.2    Mott, N.3
  • 207
    • 85115704902 scopus 로고
    • No 3.721.591, September 06
    • Ovshinsky, S. R. (1966). US Patent, No 3.721.591, September 06
    • (1966) US Patent
    • Ovshinsky, S.R.1
  • 209
    • 76949101986 scopus 로고
    • On the mechanism of the breakdown in chalcogenide glassy semiconductor films
    • Kolomiets, B. T., Lebedev, E. A., Taksami, I. A. (1969). On the mechanism of the breakdown in chalcogenide glassy semiconductor films, Phizika i Tekhnika Poluprovodn., , 2, pp. 312-314.
    • (1969) Phizika i Tekhnika Poluprovodn. , vol.2 , pp. 312-314
    • Kolomiets, B.T.1    Lebedev, E.A.2    Taksami, I.A.3
  • 210
    • 10944264430 scopus 로고    scopus 로고
    • Pulsed breakdown of chalcogenide glassy semiconductor films
    • Voronkov, E. N. (2002). Pulsed breakdown of chalcogenide glassy semiconductor films, Journ. Optoelectron. and Adv. Materials, 4, 3, pp. 793-798.
    • (2002) Journ. Optoelectron. and Adv. Materials , vol.4 , Issue.3 , pp. 793-798
    • Voronkov, E.N.1
  • 211
    • 0742284414 scopus 로고    scopus 로고
    • Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices
    • Senkader, S., Wright, C. D. (2004). Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices, Journ. Appl. Phys., 95, 2, pp. 504-511.
    • (2004) Journ. Appl. Phys. , vol.95 , Issue.2 , pp. 504-511
    • Senkader, S.1    Wright, C.D.2
  • 212
    • 0012953419 scopus 로고
    • Control of electric field at the surface of p-n junction
    • ED-11, 7
    • Davies, R. L., Gentry, F. E. (1964). Control of electric field at the surface of p-n junction, IEEE Trans. Electron Devices, ED-11, 7, pp. 313-323.
    • (1964) IEEE Trans. Electron Devices , pp. 313-323
    • Davies, R.L.1    Gentry, F.E.2
  • 213
    • 0015613904 scopus 로고
    • Field distribution near the surface of beveled p-n junctions in high-voltage devices
    • ED-20, 4
    • Cornu, J. (1974). Field distribution near the surface of beveled p-n junctions in high-voltage devices, IEEE Trans. Electron Devices, ED-20, 4, pp. 347-352.
    • (1974) IEEE Trans. Electron Devices , pp. 347-352
    • Cornu, J.1
  • 214
    • 0018545893 scopus 로고
    • Theoretical and experimental study of beveled thyristor structures
    • Couvreur, P., Van de Weile, F. (1979). Theoretical and experimental study of beveled thyristor structures, Solid State Electron., 22, 11, pp. 967-971.
    • (1979) Solid State Electron. , vol.22 , Issue.11 , pp. 967-971
    • Couvreur, P.1    Van de Weile, F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.