Sub-nanosecond semiconductor opening switches based on 4H-SiC p+pon+-diodes

Solid-State Electronics

Volumn 47, Issue 10, 2003, Pages 1769-1774

  Grekhov, Igor V ^a   Ivanov, Pavel A ^a   Khristyuk, Dmitry V ^a   Konstantinov, Andrey O ^b   Korotkov, Sergey V ^a   Samsonova, Tat'yana P ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b ACREO AB   (Sweden)

Author keywords

Fast opening switch; Silicon carbide; Voltage pulse generation

Indexed keywords

ELECTRIC CURRENTS; INDUCTANCE; OSCILLATIONS; PULSE GENERATORS; SILICON CARBIDE; SWITCHING SYSTEMS;

FAST OPENING SWITCHES;

PHOTODIODES;

EID: 0042198807     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00157-6     Document Type: Conference Paper

References (11)

1. Grekhov I.V., Efanov V.M., Kardo-Sysoev A.F., Shenderey S.V. Power drift step recovery diodes (DSRD). Solid-State Electron. 28(6):1985;597-599.
2. Grekhov IV. In: Abstracts of the 11th Pulsed Power Conference 1997, Baltimore, USA. p. 108.
3. Grekhov I, Korotkov S. Novel semiconductor-based high power switches and pulse generators. In: Abstracts of the AMEREM 2002, Annapolis MD, USA. p. 58.
4. Ivanov P.A., Levinshtein M.E., Irvine K.G., Kordina O., Palmour J.W., Rumyantsev S.L.et al. High hole lifetime (3.8 μs) in 4H-SiC diodes with 5.5 kV blocking voltage. Electron. Lett. 35(16):1999;1382-1383.
5. +n junction diode breakdown and switching properties. Proceedings of the ICSCIII-N'97, Stockholm, Sweden, September 1997. 1997;1037-1040 Trans Tech Publications, Switzerland, Germany, UK, USA.
6. Kimoto T., Miyamoto N., Matsunami H. Performance limiting surface defects in SiC epitaxial pn junction diodes. IEEE Trans. ED. 46(3):1999;471-477.
7. Sugawara Y., Asano K., Singh R., Palmour J.W. 6.2 kV 4H-SiC pin diode with low forward voltage drop. Carter C.H., Devaty R.P., Rohrer G.S. Silicon carbide and related materials - 1999. Materials science forum. vols. 338-342:2000;1371-1374 Trans Tech Publications, Switzerland.
8. Benda H., Spenke E. Reverse recovery processes in silicon power rectifiers. Proc. IEEE. 55(8):1967;1331-1354.
9. Levinshtein M.E., Mnatsakanov T.T., Ivanov P.A., Palmour J.W., Rumyantsev S.L., Singh R.et al. Paradoxes of carrier lifetime measurements in high-voltage SiC diodes. IEEE Trans. ED. 48(8):2001;1703-1710.
10. Matsunami H. An overview of SiC growth. Carter C.H., Devaty R.P., Rohrer G.S. Silicon carbide and related materials - 1999. Materials science forum. vols 338-342:2000;125-130 Trans Tech Publications, Switzerland.
11. Sugawara Y, Takayama D, Asano K, Singh R, Palmour J, Hayashi T. 19 kV 4H-SiC pin diodes with low power loss. In: Proceedings of the International Symposium on Power Semiconductor Devices & ICS, Osaka, Japan, 4-7 June 2001. p. 27-30.