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Volumn 34, Issue 6, 2000, Pages 665-667

Critical voltage growth rate when initiating the ultrafast impact ionization front in a diode structure

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EID: 0034196193     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1188051     Document Type: Article
Times cited : (8)

References (22)
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    • Yu. D. Bilenko, M. E. Levishteǐn, M. V. Popova, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 17, 1812 (1983) [Sov. Phys. Semicond. 17, 1156 (1983)].
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    • A. F. Kardo-Sysoev and M. V. Popova, Fiz. Tekh. Poluprovodn. (St. Petersburg) 30, 803 (1996) [Semiconductors 30, 431 (1996)].
    • (1996) Semiconductors , vol.30 , pp. 431
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    • A. M. Minarskiǐ and P. B. Rodin, Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 433 (1997) [Semiconductors 31, 366 (1997)].
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    • S. N. Vaǐnshteǐn, Yu. V. Zhilyaev, and M. E. Levinshteǐn, Pis'ma Zh. Tekh. Fiz. 14, 1552 (1988) [Sov. Tech. Phys. Lett. 14, 664 (1988)].
    • (1988) Sov. Tech. Phys. Lett. , vol.14 , pp. 664


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.