Parameters of electron-hole scattering in silicon carbide

Journal of Applied Physics

Volumn 93, Issue 2, 2003, Pages 1095-1098

  Mnatsakanov, T T ^a   Levinshtein, M E ^b   Ivanov, P A ^b   Palmour, J W ^c   Tandoev, A G ^a   Yurkov, S N ^a  

^a ALL RUSSIAN ELECTROTECHNICAL INSTITUTE   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON SCATTERING; ISOTHERMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES;

ELECTRON-HOLE SCATTERING;

SILICON CARBIDE;

EID: 0037439459     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1528310     Document Type: Article

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