Ultrafast current switching using the tunneling-assisted impact ionization front in a silicon semiconductor closing switch

Technical Physics Letters

Volumn 31, Issue 3, 2005, Pages 196-199

  Lyubutin, S K ^a   Rukin, S N ^a   Slovikovsky, B G ^a   Tsyranov, S N ^a  

^a INSTITUTE OF ELECTROPHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 17744386777     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1894430     Document Type: Article

References (9)

1. I. V. Grekhov and A. F. Kardo-Sysoev, Pis'ma Zh. Tekh. Fiz. 5, 950 (1979) [Sov. Tech. Phys. Lett. 5, 395 (1979)].
2. I. V. Grekhov and A. F. Kardo-Sysoev, Pis'ma Zh. Tekh. Fiz. 5, 950 (1979) [Sov. Tech. Phys. Lett. 5, 395 (1979)].
3. I. V. Grekhov, A. F. Kardo-Sysoev, L. S. Kostina, and S. V. Shendereǐ, Zh. Tekh. Fiz. 51, 1709 (1981) [Sov. Phys. Tech. Phys. 26, 984 (1981)].
4. I. V. Grekhov, A. F. Kardo-Sysoev, L. S. Kostina, and S. V. Shendereǐ, Zh. Tekh. Fiz. 51, 1709 (1981) [Sov. Phys. Tech. Phys. 26, 984 (1981)].
5. P. Rodin, U. Ebert, W. Hundsdorfer, and I. Grekhov, J. Appl. Phys. 92, 958 (2002).
6. P. Rodin, U. Ebert, W. Hundsdorfer, and I. Grekhov, J. Appl. Phys. 92, 1971 (2002).
7. E. A. Alichkin, S. K. Lyubutin, A. V. Ponomarev, et al., Prib. Tekh. Éksp., No. 4, 106 (2002).
8. S. N. Rukin and S. N. Tsyranov, Pis'ma Zh. Tekh. Fiz. 30 (1), 43 (2004) [Tech. Phys. Lett. 30, 19 (2004)].
9. S. N. Rukin and S. N. Tsyranov, Pis'ma Zh. Tekh. Fiz. 30 (1), 43 (2004) [Tech. Phys. Lett. 30, 19 (2004)].