Field-enhanced ionization of deep-level centers as a triggering mechanism for superfast impact ionization fronts in Si structures

Journal of Applied Physics

Volumn 98, Issue 9, 2005, Pages

  Rodin, Pavel ^a   Rodina, Anna ^a   Grekhov, Igor ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL CENTERS; DRIFT VELOCITY; FREE CARRIERS; P-N JUNCTIONS;

ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRON TRAPS; ELECTRON TUNNELING; PHONONS; SEMICONDUCTOR JUNCTIONS; SILICON; VELOCITY;

IMPACT IONIZATION;

EID: 27844497647     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2125118     Document Type: Article

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