Tunneling-assisted impact ionization fronts in semiconductors

Journal of Applied Physics

Volumn 92, Issue 2, 2002, Pages 958-964

  Rodin, Pavel ^a,b   Ebert, Ute ^b   Hundsdorfer, Willem ^b   Grekhov, Igor ^c  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b CWI   (Netherlands)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BAND TO BAND TUNNELING; DENSE ELECTRON-HOLE PLASMAS; DRIFT VELOCITIES; ELECTRICAL FIELD; EXTERNAL LOADS; FRONT VELOCITY; IONIZATION FRONTS; LAYERED SEMICONDUCTORS; VOLTAGE DROP; VOLTAGE PULSE; VOLTAGE RAMP; VOLTAGE RISE;

ELECTRIC POTENTIAL; POWER ELECTRONICS;

IMPACT IONIZATION;

EID: 0037100970     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1486258     Document Type: Article

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