Transverse stability of an impact-ionization front in a Si p+-n-n+ structure

Semiconductors

Volumn 31, Issue 4, 1997, Pages 366-370

  Minarskii A M ^a   Rodin, P B ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040513138     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187164     Document Type: Article

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