Effects of transverse doping variations on the transient response of silicon avalanche shaper devices

IEEE Transactions on Electron Devices

Volumn 45, Issue 8, 1998, Pages 1761-1768

  Jalali, Hamid ^a   Joshi, Ravindra P ^a   Gaudet, John A ^a  

^a Old Dominion University   (United States)

Author keywords

Avalanche breakdown; power semiconductor switches; semiconductor device modeling; silicon

Indexed keywords

ELECTRIC BREAKDOWN; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

SILICON AVALANCHE SHAPER DEVICES; TRANSIENT RESPONSE; TRANSVERSE DOPING;

AVALANCHE DIODES;

EID: 0032138135     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.704376     Document Type: Article

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