Superfast fronts of impact ionization in initially unbiased layered semiconductor structures

Journal of Applied Physics

Volumn 92, Issue 4, 2002, Pages 1971-1980

  Rodin, P ^a,b   Ebert, U ^a   Hundsdorfer, W ^a   Grekhov, I V ^c  

^a CWI   (Netherlands)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE BREAKDOWN; BULK SAMPLES; COLLECTIVE MODES; DENSE ELECTRON-HOLE PLASMAS; DRIFT VELOCITIES; FRONT PROPAGATION; HIGH CONDUCTIVITY; LAYERED SEMICONDUCTORS; LAYERED STRUCTURES; P-N JUNCTION; SEMICONDUCTOR STRUCTURE; VOLTAGE RAMP;

SEMICONDUCTOR JUNCTIONS;

IMPACT IONIZATION;

EID: 0037103582     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1494113     Document Type: Article

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